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Hole field-effect mobility

Fig. 6 (a) Scanning electron and (b) atomic force microscopy images of copper phthalocyanine Langmuir-Blodgett monolayer FETs. (c) Hole field-effect mobility as a function of the copper phthalocyanine channel length... [Pg.224]

FET mobility measurements thus constitute a sound method for investigating changes in the mobility of an organic semiconductor due to morphology variations. On the basis of the FET characteristics of MDMO-PPV films spin-cast from different solvents, we will discuss the influence of interchain polymer aggregates on the hole field-effect mobility and further consequences for the short-circuiting of solar cells. [Pg.198]

It should be noted that previous studies have shown that when using gold source and drain electrodes, hole injection and transport can take place in [60]PCBM [79]. However, in this case the mobility is significantly lower than that of holes in P3HT [82], for example, and hence one can assume that hole field-effect mobility measurements made on a 1 1 (wt%) P3HT [60]PCBM blend should be representative of the P3HT network only, with a negligible modification due to the [60]PCBM network. The same can also be said of most other p-type polymers. [Pg.235]

Figure 16.26 Electron and hole field effect mobility versus To for compounds 47 ( ), 50 (A) and 49 ( ). Reprinted with permission from M.-H. Yoon, S. DiBenedetto, A. Facchetti and T.. Marks, J. Am. Chem. Soc., 127, 1348 (2005). Copyright 2005 American Chemical Society... Figure 16.26 Electron and hole field effect mobility versus To for compounds 47 ( ), 50 (A) and 49 ( ). Reprinted with permission from M.-H. Yoon, S. DiBenedetto, A. Facchetti and T.. Marks, J. Am. Chem. Soc., 127, 1348 (2005). Copyright 2005 American Chemical Society...
Facchetti and co-workers have synthesized thiophene-diazine co-oligomers 60 and 61 [125]. These materials are much more easily reduced and difficult to oxidize than the corresponding oligothiophenes. However, these systems exhibit relatively low hole field effect mobilities of 10 cm V s as a consequence of the poor film microstructure. [Pg.624]

Fig. 2 The evolution of the hole field-effect mobility of various organic semiconductors in time. The data of Table 1 are grouped into families of molecules with similar main chain. Additionally, hole field-effect mobilities of rubrene and pentacene in single crystals are depicted. For comparison, the electron mobilities of a-Si H and poly-Si are shown... Fig. 2 The evolution of the hole field-effect mobility of various organic semiconductors in time. The data of Table 1 are grouped into families of molecules with similar main chain. Additionally, hole field-effect mobilities of rubrene and pentacene in single crystals are depicted. For comparison, the electron mobilities of a-Si H and poly-Si are shown...
Fig. 4 Simulated current/voltage characteristics of an ambipolar OFET using the solution of the resistor-capacitance network model depicted in Fig. 3. a The output (V = 0,10,20,30V) and b the transfer characteristic (Vj = 10,20,30V). The electron tuid hole field-effect mobilities ace assumed to be equal... Fig. 4 Simulated current/voltage characteristics of an ambipolar OFET using the solution of the resistor-capacitance network model depicted in Fig. 3. a The output (V = 0,10,20,30V) and b the transfer characteristic (Vj = 10,20,30V). The electron tuid hole field-effect mobilities ace assumed to be equal...
A pentacene OFET where a Si02 gate dielectric has been implemented, shows typically decent p-channel behavior with field-effect mobilities exceeding 0.1cm V [60] while a lack of any electron conduction is usually observed. This disparity in the n- and p-type behavior is also mirrored in Fig. 8 where exem-plarily the evalution of the electron and hole field-effect mobilities of pentacene over the last 15 years is depicted. Respective data are listed in Table 2. While from the year 1992 up to now the hole field-effect mobility in pentacene steadily increased from 0.002 to 5cm V s the first signature of electron transport in field-effect transistors was not found before 2003 [35]. Nowadays, comparable field-effect mobilities for electrons and holes are obtained in transistors comprising polycrystalline pentacene [60, 61]. [Pg.229]

Fig. 8 The evolution of the electron and hole field-effect mobility of pentacene in time. For comparison, the electron mobility of a-Si H is shown. The data are listed in Table 2... Fig. 8 The evolution of the electron and hole field-effect mobility of pentacene in time. For comparison, the electron mobility of a-Si H is shown. The data are listed in Table 2...
Fig. 16 Electron and hole field-effect mobilities of pentacene-based OEETs for different polymeric gate dielectrics depicted in Fig. 15. The respective mobilities have been extracted from transfer characteristics of either unipolar p-channel or unipolar n-channel transistors. For one gate dielectric gold or Ca source/drain metals have been used to define the polarity of the field-effect transistors... Fig. 16 Electron and hole field-effect mobilities of pentacene-based OEETs for different polymeric gate dielectrics depicted in Fig. 15. The respective mobilities have been extracted from transfer characteristics of either unipolar p-channel or unipolar n-channel transistors. For one gate dielectric gold or Ca source/drain metals have been used to define the polarity of the field-effect transistors...
Charge transport in the accumulation channel is described by the percolation model [24] based on thermally activated tunneling of holes between localized states in an exponential density of states, described in Section 13.2.2. In the accumulation regime this Variable Range Hopping (VRH) model yields a gate-voltage dependent field-effect mobility of the form ... [Pg.334]

M = Tb, Lu) into organic thin-film transistors by LB technique and reported their field effect mobility, which represented the first report for p-type OFETs based on bis(phthalocyaninato) rare earth complexes prepared via LB method [88], Due to the highly ordered molecular arrangement of M(Pc)[Pc(OC8Hi7)g] (M = Tb, Lu) in LB films and the appropriate HOMO energy level of these double-deckers relative to the Au source-drain electrodes, the OFETs reported in that work exhibited higher hole transfer mobility of 1.7 x 10-3 cm2 V-1 s-1 in comparison with those fabricated from monomeric phthalocyanine LB films. [Pg.298]

Fig. 5.25. (a) Ids versus Kis characteristics of a toluene-based MDMO-PPV FET with Au contacts and L = 3 pm. (c) The same for chlorobenzene-based MDMO-PPV. (b) Right hand axis, circles Ids plotted as a function of Vgs for Vis = —90 V on a logarithmic scale. Left hand axis, triangles I 2 plotted as a function of Vrgs. From the slope at high negative VgS, the field-effect mobility of toluene-based MDMO-PPV for holes is calculated to be pfe = 5 x 10 6 cm2/V s. (d) The same for chlorobenzene-based MDMO-PPV with pfe = 3 x 10-5 cm2/V s... [Pg.200]

Table 8.2 Field effect hole mobilities //, threshold voltages Fj, and channel lengths L of the samples A to F (see Table 1). The values were determined according to method A. denotes the thermal activation energy of the field effect mobility determined from the slopes of the plots in Figure 8.8. Table 8.2 Field effect hole mobilities //, threshold voltages Fj, and channel lengths L of the samples A to F (see Table 1). The values were determined according to method A. denotes the thermal activation energy of the field effect mobility determined from the slopes of the plots in Figure 8.8.
Figure 8.10 Molecular structures of (a) MEH-PPV and (b) MDMO-PPV. (c) Field-effect mobility of holes and electrons in MEH-PPV [60]PCBM blend OFETs in various blend ratios, (d) Field-effect mobility of holes and electrons in MDMO-PPV [60]PCBM blend OFETs in various blend ratios before and after annealing... Figure 8.10 Molecular structures of (a) MEH-PPV and (b) MDMO-PPV. (c) Field-effect mobility of holes and electrons in MEH-PPV [60]PCBM blend OFETs in various blend ratios, (d) Field-effect mobility of holes and electrons in MDMO-PPV [60]PCBM blend OFETs in various blend ratios before and after annealing...
The observed reduction in electron field-effect mobility was then used as an indicator of when the phase segregation process illustrated in Figure 8.8c was taking place. Single OFETs were annealed under high vacuum at temperatures of 130 and 160 °C, and the field-effect mobilities of holes and electrons were measured. The resulting data are plotted in Figure 8.13. Since in this case the measurements are made while at elevated temperatures, the effects of temperature-dependent transport [51, 88] had also to be considered. [Pg.239]

Figure8.13 Field-effect mobility of holes and (a) 130°Cand(b) 160°C. t = 5[i.m, electrons in a 1 1 (wt%) P3HT [60]PCBM blend V/= 10 mm for both OFETs. (Reproduced from ambipolar bottom-gate, bottom-contact OFET Ref. [77] with permission of john Wiley Sons, as a function of time, while being annealed at Inc.)... Figure8.13 Field-effect mobility of holes and (a) 130°Cand(b) 160°C. t = 5[i.m, electrons in a 1 1 (wt%) P3HT [60]PCBM blend V/= 10 mm for both OFETs. (Reproduced from ambipolar bottom-gate, bottom-contact OFET Ref. [77] with permission of john Wiley Sons, as a function of time, while being annealed at Inc.)...

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See also in sourсe #XX -- [ Pg.216 ]




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