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High frequency characteristics

Xg wave length, f frequency, c light velocity, Sr dielectric constant, tan 5 dielectric loss tangent [Pg.7]

However, conductor loss depends on the resistance (surface resistance) of the conductor. As the frequency increases, there is a tendency for the current to concentrate in the surface parts of the conductor. The part where the current flows is known as skin depth (the depth where current density falls to 1/e = 0.37 of its value at the surface), and it decreases in inverse proportion to the square root of the frequency. Surface resistance Rs is determined by skin depth d and conductor conductivity o as in the formula below. It is inversely proportional to the square root of conductor conductivity, and increases proportional to the square root of the frequency. [Pg.7]

Surface Mount Device (SMD) Band Pass Filter (BPF) [Pg.8]

Comparison between the dielectric characteristics of ceramic material and resin [Pg.9]

As shown above, in order to reduce the loss at high frequencies over 1 GHz, it is beneficial to use dielectric material with low tan 5. As shown in Table 1.3, in general tan 8 is lower for ceramic materials compared with resin materials. Furthermore, tan 5 of LTCCs is 1/3 lower than that of FR4, the material used for printed resin boards, and compared with resin printed circuit boards, it is more suitable for high frequency apphcations. [Pg.9]


Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the... Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...
The capacitors used for this function are high-voltage Aim or ceramic capacitors that exliibit very good high frequency characteristics. These capacitors... [Pg.89]

Noise sources are part of noise loops which are printed circuit board connections between high-frequency current sinks and current sources. Following the PC board design practices in Section 3.14 will help greatly in reducing the radiated RFI. Appreciation of the high-frequency characteristics of the common components and PC boards is needed. [Pg.244]

With a scanning circuit and a-Si H, it is possible to provide an a-Si H monolithic large area solid-state image sensor, although it is necessary to improve high-frequency characteristics. [Pg.139]

A singlet at 8 2.15 is H on carbon next to carbonyl, the only type of proton in the compound. The IR spectrum shows no OH, and shows two carbonyl absorptions at high frequency, characteristic of an anhydride. Mass of the molecular ion at 102 proves that the anhydride must be acetic anhydride, a reagent commonly used in aspirin synthesis. q q... [Pg.532]

These considerations show that transient experiments will not be meaningful unless the cell time constant is small compared to the time scale of the measurement, regardless of the high-frequency characteristics of the control circuitry. [Pg.647]

The basic idea of WT is to correlate any arbitrary function f t) with the set of wavelet functions obtained by dilation and translation. A stretched wavelet correlates with low frequency characteristics of the signal, while a compressed wavelet correlates with high frequency characteristics (Blatter 1988). Technically, we can say that scale parameter v relates the spectral content of the function f t) at a different positions X (translation parameter, see Figure 9.9). The correlation process described is the Continuous Wavelet Transform (CWT) of a signal, mathematically described as... [Pg.150]

Figure 9. High frequency characteristics equivalent circuit of cable and motor system... Figure 9. High frequency characteristics equivalent circuit of cable and motor system...
Improved electrical resistor (Otis Boykin) Boykin s resistor had improved precision, and its high-frequency characteristics were better than those of previous resistors. [Pg.2064]

Differentiation of signal—operation on low-frequency falloff characteristic of response curve (uJq Integration af signal—operation on high-frequency characteristic of response curve 01 01 ... [Pg.155]


See other pages where High frequency characteristics is mentioned: [Pg.392]    [Pg.244]    [Pg.200]    [Pg.397]    [Pg.120]    [Pg.582]    [Pg.157]    [Pg.171]    [Pg.133]    [Pg.133]    [Pg.140]    [Pg.3508]    [Pg.181]    [Pg.535]    [Pg.6]    [Pg.203]    [Pg.210]    [Pg.211]    [Pg.211]    [Pg.212]    [Pg.156]   


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High frequencies

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