Growth run

Figure 6. Size analyses of samples for gypsum growth run at 50°C. Size as volume equivalent size.

Figure 7. Crystal content, supersaturation and growth rate vs time for gypsum growth run at 50 C.

The turnaround time for a boule growth run is several days. It takes time to prepare the source, load the crucible, attach the seed, evacuate the system carefully, gradually heat up the crucible under controlled conditions, and finally grow the boule and then cool down. The turnaround time itself is not a problem, however, the cost of manufacturing a wafer needs to decrease so the price of the wafers can be reduced in order for SiC to gain acceptance in the market. 

The dependence of solubility on pressure requires an understanding of the equation of state of hydrothermal solutions saturated with quartz. Systematic P-V-T studies have been conducted.(77) Fig. 4(77) summaries some of this data. As can be seen, behavior is qualitatively like that for pure H2O but with pressures substantially reduced. Pressure in hydrothermal quartz synthesis is established by the initial fraction of the vessel volume (% fill) filled with (OH) solution at the beginning of the growth run. 

Deposition of the laser entrance window in the PLD chamber - reduced laser pulse energy - regular cleaning of the chamber entrance window after every growth run, shields between plume and window. 

Combinatorial PLD Dramatic increase of the rate of discovery and improvement of new compounds, synthesis of up to thousands of different compositions on one wafer in a single growth run [129-131]... 

The conditions appropriate for growing fibers from natural gas may not be successful with other hydrocarbon feedstocks. Using pure ethane during a standard growth run produces merely a tarry sludge. 

Figure 1. Pseudoternary system YBC-BaCu02-CuO showing compositions along constant Ba/Y lines used in melting studies in Au crucibles at 950°C in air. Composition a was used in all crystal growth runs. Compositions are given in terms of mole percent of the binary oxides BaO, CuO and YOj 5.

Figure 7.17 FWHM of the co (0002) XRD RC of GaN films. Filled symbols correspond to GaN grown on PSC with the different thickness of the porous layer. Open symbols correspond to the films grown on nonporous substrates in the same growth runs, and are given for reference purposes only. Reproduced from M. Mynbaeva et al., ]. Cryst. Growth, 303, 472M79. Copyright (2007), with permission from Elsevier...

Figure 1. Single crystals of synthetic pretulite [pure Sc(P04)] are shown inside a 50 ml Pt crucible following a high-temperature-solution (flux) growth run. The large white central area is solidified Pb2P20v flux, and the SCPO4 crystals have nucleated and grown around the periphery of the Pt crucible. A normal flux-growth run takes 30 days, and an additional 30 days is required to chemically remove the Sc(P04) crystals from the solidified flux. The outer diameter of the Pt crucible is 3.9 cm.

FIGURE 4 Reproducibility of the cavity wavelength of 770- and 850-nm VCSEL structures versus the growth run number. Pregrowth calibrations with the in situ reflectometer were made with Runs 1067, 1111, and 1162. 

Biolab contains two rotors inside its incubator that can simulate different levels of gravity. The Waico experiment required 4 different gravity levels and therefore required 2 separate runs. Each run contains 8 experiment containers on the rotors Video is taken every day to follow the growth Runs take 10-14 days... 

Fig. 10.5 Data from a sapphire crystal growth run showing the desired diameter (smooth curve), the measured diameter and the process power (arbitral units).

Fig. 10.7 Data from a lithium tantalate crystal growth run showing the desired diameter (smooth curve), the measured diameter and the process power (arbitrary units). The run was restarted after 45 h. In addition to the interface transition at point A, which repeats at point D, the minor interface fluctuations at points B and C repeat at points E and F.

The AlN structural quality has been assessed by HRXRD. Both the symmetrical and asymmetrical reflections of the epilayers exhibit narrow )-scan peaks, as shown in Figure 4.26. The FWHM value for the (1100) reflection is as small as 50 arcsec, a little bit larger than the best value for 4H-AlN/4H-SiC (1120). The asymmetrical reflections also show FWHM values smaller than 70 arcsec. Symmetrical FWHM values as small as those shown in Figure 4.26 have been successfully reproduced over several AlN growth runs. The symmetric m-scan FWHM values for optimized AlN epilayers do not change when measurements are made for different orientations of the incident X-ray beam with respect to the [0001] direction. 

Figure 12.1 HRXRD oj-2B scans for the InGaN/GaN MQWs grown in the same growth run on (a) LEO o-plane GaN and (b) planar o-plane GaN template.

We are in the case of spherical particles with inward development, growth limited by a reaction taking place at the internal interface. The dimensionless rate for a rmcleation-anisotropic growth run is given by (see Table A.4.2 in Appendix 4) ... 

The first and all following iterations are multicanonical chain-growth runs and proceed along similar lines as described above, with some modifications. The prediction for the new weight follows again (4,149), but the importances (4,150) are in the ith iteration introduced as... 

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