Group III nitride precursors

The significant vapor pressure of compound 26 allowed rapid mass transport of the precursor at 22 °G and the facile decomposition pathway resulted in film growth at temperatures as low as 200 °G. Epitaxial GaN films were deposited from 26 at 650 °G via LPGVD. The growth rate of the GaN films deposited was 800 A min Despite these excellent growth properties, the high reactivity of 26 necessitates careful manipulation of the neat product, as a vigorous exothermic decomposition can result. 

Dimethylhydrizodimethylgallium, [Me2GaN(H)NMe2]2 37, was used to produce polycrystalline GaN thin films on GaAs(lOO) at 580°G by By scanning electron microscopy (SEM), the film had the appearance of 

Pyrolysis of the related precursor [H2GaN(H)NMc2]2 40 on a supported inert oxide film, Hf02, has been studied 

Further studies were reported on the azido complexes [(]sj2)Qa (GH2)3NMe2 2] 45, and 42.  

Epitaxial GaN films were deposited from compound 41 via low-pressure MOCVD in the absence of ammonia at temperatures above 700 Powder XRD of the resulting films showed that they were crystalline above 700 °G 

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