Group V nitrides

There is very little reported on the chemical composition analysis in the mixed group V nitride alloy system. This is partly due to the difficulties in growing the alloys and because the alloys tend to phase separate above a few % of nitrogen incorporation. The alloy composition is normally determined by an optical technique or XRD. 

Figure 4 Microhardness of 5-TiN and group V nitrides as a function of stoichiometry. (From Ref. 38, 39.)...

The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. 

No, the editor didn t know what this name meant either.) It means salts of the triva-lent anions of Group V, restricted in [1] to arsenides, antimonides and bismuthides and prepared by reaction of sodium pnictides with anhydrous halides of transition and lanthanide metals. This violently exothermic reaction may initiate as low as 25°C. Avoidance of hydrated halides is cautioned since these are likely to react uncontrollably on mixing. Another paper includes a similar reaction of phosphides, initiated by grinding [2], Nitrides are reported made from the thermally initiated reaction of sodium azide with metal halides, a very large sealed ampoule is counselled to contain the nitrogen [3],... 

S. Nakamura, Group III-V Nitride Based Ultraviolet-Blue-Green-Yellow Light-Emitting... 

Diffusion in the Presence of Excess Point Defects. Oxidation-Enhanced Diffusion. Oxidation generally enhances the diffusion of group III and group V elements except for antimony (Figure 13). Oxidation-enhanced diffusion is generally observed by depositing a silicon nitride mask on the silicon surface that will prohibit oxidation in the regions that it covers. 

In the nitride alloy systems, accurate measurement of the chemical composition is yet to be developed. SIMS can provide precise determination of the alloy composition, but it is complicated by the matrix effect of the element as well as the difficulties in growing the alloys. The problem of phase separation associated with the growth of InGaN and the mixed group V alloys needs to be addressed. 

Nitrogen, the first element in Group V, has a chemistry sufficiently complex and interesting so that it can profitably be studied apart from the remainder of the group. In essentially all of its common compounds (except for the metallic nitrides), nitrogen is bonded covalently to carbon, oxygen, or hydrogen or to combinations of these three elements. 

IRON AND THE ELEMENTS OE GROUP V. The heat of formation of iron nitride is as follows —1... 

Besides metal oxides, many nitrides were initially identified by their characteristic IR frequencies. Out of the large variety of investigated compounds, only one with a single M=N group V(=N)Cl2(Py)2 (Willing et al., 1987) and one species containing three distinct Mo N units (terpy = 2,2 6, 2"-terpyridin) ... 

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