Band Structure of Group III Nitrides

1 General remarks on the band structures of group III nitrides 

2 Electronic band structures of GaN and AIN A6.3 Spin-orbit and crystal-field splitting energies of GaN and AIN 

4 Luttinger and Bir-Pikus parameters of GaN and AIN A6.5 Electron and hole effective masses of GaN and AIN A6.6 Deformation potentials of GaN and AIN A6.7 Momentum matrix elements of GaN A6.8 Subband structures of GaN/AlGaN quantum wells A6.9 Optical gain of bulk GaN and GaN/AlGaN quantum wells 

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In order to solve these problems, it is very important and useful to clarify band structures of group-III nitrides and their QW structures and also to obtain their band structure parameters. In this Datareview, definitions of band structure parameters and available data on them for GaN and AIN are given. The data are mainly about theoretical results with first-principles band structure calculations within the local density functional approximation (LDA). They are compared with currently available experimental results. Note that the LDA calculation grossly underestimates a bandgap and that it gives almost zero bandgap for InN. Such a calculation is unlikely to yield reliable parameters for InN, especially effective masses. Therefore, the band structure parameters of InN are not given in this Datareview. 

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