Germanium semiconduction

Germanium [7440-56-4] Ge, at. no. 32, having electronic configuration [Ar] is a semiconducting metalloid element found in Group 14 (IVA),... 

There are two experimental investigations of resistivity of germanium under elastic shock compression. The work of Graham et al. [66G01] interpreted limited measurements on [111] Ge on the basis of intrinsic semiconduction... 

Bolts JM, Wrighton MS (1978) Chemically derivatized n-type semiconducting germanium photoelectrodes. Persistent attachment and photoelectrochemical activity of ferrocene derivatives. J Am Chem Soc 100 5257-5262... 

The crystal structure of germanium is similar to that of diamonds and sihcon, and its semiconducting properties are also similar to silicon. 

Once germanium is recovered and formed into blocks, it is further refined by the manufacturer of semiconductors. It is melted, and the small amounts of impurities such as arsenic, gallium, or antimony, are added. They act as either electron donors or acceptors that are infused (doped) into the mix. Then small amounts of the molten material are removed and used to grow crystals of germanium that are formed into semiconducting transistors on a germanium chip. The device can now carry variable amounts of electricity because it can act as both an insulator and a conductor of electrons, which is the basis of modern computers. 

Consider the growth of a germanium (Ge) film in the production of a semiconducting thin film [16], The germanium can be deposited onto a substrate through the reaction of GeCU with hydrogen gas ... 

Conduction that arises from thermally or optically excited electrons is called intrinsic semiconduction. The conduction of intrinsic semiconductors usually takes place at elevated temperamres, since sufficient thermal agitation is necessary to transfer a reasonable number of electrons from the valence band to the conduction band. The elements that are capable of intrinsic semiconduction are relatively limited and are shown in Figure 6.12. The most important of these are silicon and germanium. 

The theory outlined above was developed for group IY semiconducting elements such as silicon and germanium some of the compounds of group III and Y elements, the III-V compounds, are also covalently bonded and have similar electrical properties which can be described in terms of a band model. The best known semiconducting III-V compound is GaAs, which is exploited for both its photonic and semiconducting properties. 

Very little has been published on the electrolytic etching of semiconducting materials other than germanium and silicon. There probably have been many unpublished small experiments carried out to determine a suitable electropolishing process for many of the intermetallic semiconductors. Uhlir (36) for example, found that a largely nonaqueous HF solution suitable for electropolishing silicon would also electropolish GaSb. 

In the present paper the reaction of some elemental and compound semiconductors with aqueous solutions will be considered in relation to their surface structure. The influence of their semiconducting nature will be discussed where it is of significance. This paper is based primarily on work on germanium and HI-V compounds performed at die Lincoln Laboratory of M. I. T. over the last few years. 

Transistors are made of tiny slices of the crystals of semiconducting materials, such as silicon or germanium, to which wires are attached. In the early versions, two of the three electrical contacts—comparable to those in the vacuum tube, but miniaturized—were fine wires pressed into the surface of a semiconductor crystal in close pairs to create areas where current would flow only in one desired direction. 

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