Germanium diselenide

TAR/ZHD] Tarasov, V. V., Zhdanov, V. M., Mal tsev, A. K., Low-temperature heat capacity, enthalpy, and entropy of germanium disulfide and germanium diselenide, Russ. J. Phys. Chem., 42, (1968), 685-687. Cited on page 210. 

K. of crystalline germanium diselenide (GeSe2). Thermochemical Ge-Se bond-dissociation enthalpies. Revised values for the standard molar enthalpies of formation of Gep4(g) and SeFe(g), J. Chem. Thermodyn., 18, (1986), 555-562. Cited on page 211. 

HA/SUS] O Hare, P. A. G., Susman, S., Volin, K. J., The energy difference between the crystalline and vitreous forms of germanium diselenide as determined by combustion calorimetry in fluorine. The Ge-Se bond energy, J. Non-Cryst. Solids, 89, (1987), 24-30. Cited on page 211. 

Eernandez-Guasti M., Haro-Poniatowski E. and Camacho-Lopez S., Laser-induced diffraction patterns in germanium diselenide amorphous films, AppL Opt, 31, 3453-3459 (1992). 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

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