Generation regime

In practice this condition may be fulfilled not only in excitation, e.g. by means of a pulsed laser or a continuous dye laser with insufficient frequency selectivity, but also by means of fines from a continuous gas laser working in simultaneous axial mode u>i (multimode) generation regime see Fig. 3.10(a). Let Au>i = u>i+1 — uii = itc/L denote the mode separation in a laser, L being the resonator length. Then, as pointed out in [110, 127, 231], broad line approximation works if Awj is smaller than the width of the Bennet holes r en [268, 320] in the absorption contour see Fig. 3.10(6). The positions of the Bennet holes are determined by the condition ujq — w/ + kv = 0, where luq is the central transition frequency, k is the wave vector and v is the velocity of the absorbing particle. The broad fine approximation is valid if the following conditions are fulfilled (see Fig. 3.10) ... 

Rotating cone viscometers are among the most commonly used rheometry devices. These instruments essentially consist of a steel cone which rotates in a chamber filled with the fluid generating a Couette flow regime. Based on the same fundamental concept various types of single and double cone devices are developed. The schematic diagram of a double cone viscometer is shown in... 

In the Couette flow inside a cone-and-plate viscometer the circumferential velocity at any given radial position is approximately a linear function of the vertical coordinate. Therefore the shear rate corresponding to this component is almost constant. The heat generation term in Equation (5.25) is hence nearly constant. Furthermore, in uniform Couette regime the convection term is also zero and all of the heat transfer is due to conduction. For very large conductivity coefficients the heat conduction will be very fast and the temperature profile will... 

The stress field corresponding to this regime is shown in Figure 6.18. As this figure shows the measuring surface of the cone is affected by these secondary stresses and hence not all of the measured torque is spent on generation of the primary (i.e, viscometric) flow in the circumferential direction. 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

It is seldom possible, either economically or timewise, to study eveiy potential mixing variable or to compare the performance of many impeller types. In many cases, a process needs a specific fluid regime that is relatively independent of the impeller type used to generate it. Because different impellers may require different geometries to achieve an optimum process combination, a random choice of only one diameter of each of two or more impeller types may not tell what is appropriate for the fluid regime ultimately required. 

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