Generation-recombination current

Lp Pi 50 pm. and the reverse saturation current would be 17 x 10 = 17 pA for a square centimeter of junction area. Typical reverse saturation currents are about one thousand times greater as a result of generation—recombination currents in the depletion region (9). As the reverse voltage bias increases, the field increases in the depletion region until avalanche breakdown occurs, resulting in the characteristic shown in Figure 7. 

Generation-recombination current, 22 135 Generation TV International Forum (GIF), 17 557... 

The leakage current IR of a reverse-biased junction can be expressed as a sum of several components that have been discussed in detail by Tamg and Pankove (1979). Under the present experimental conditions, the major components are the surface generation-recombination current Iv and the tunneling current /,. 

The contribution by the generation-recombination current to the overall current is negligibly small for ZnO even for very small effective carrier lifetimes, because the intrinsic carrier concentration is nearly zero at room temperature (RT). Even at... 

These observations, and application of Kirchoff s law, suggest that the time dependent electrochemical current density, Je(t), may be written as the product of the fractional intermediate surface coverage, 6 t(t), and the difference between the photo-generation and recombination current densities, JL(t) and Jr(t), respectively. Thus ... 

If the surface of a single crystal n-type semiconductor is damaged by abrasion or by high energy particle bombardment, the generation (recombination) velocity for holes in the surface layer is increased to the extent that holes are readily available to carry out anodic reactions at a rapid rate. This condition lasts until most of the damaged surface material is removed. Then the anode current is limited as previously described due to hole depletion. 

Generation-recombination (gr) noise and Johnson noise are the fundamental mechanisms in photoconductive detectors. The total noise current is given by... 

We want to derive in a general way the shot-noise-like expression for generation-recombination (gr) noise used in (4.12) in Subsection 4.1.3. The usual expression for the gr noise current in a two-carrier semiconductor [4.17,18] can be written as... 

We want to determine the relative magnitudes of the diffusion current and the space-charge layer generation-recombination (gr) current in a p-n junction for a model in which there are no Shockley-Read recombination centers in the... 

The widespread application of 10.6 pm heterodyne detection for communications, radar and infrared active imaging is presently restricted by the need to cool the detectors below temperatures obtainable from thermal electric coolers ( 180 K). Presently the main reason for cooling 10.6 pm heterodyne detectors is to reduce the thermal generation-recombination rate in the photoconductor or the diffusion current in diodes to a level that can be overridden by available laser local oscillator power. In general the use of photoconductors (with band gaps tailored for 10.6 pm radiation) seems to be a realistic approach to operation at 180 K or above. Since the thermal generation-recombination rate is of the order of 10 /t hole-electron pair per cm at 180 K it follows that a 1 pm thick, 10 cm area photoconductor with a carrier lifetime (t) of 10" s would require 1 milliwatt of LO power to approach hvB detector sensitivity at bandwidths of... 

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