GD-TOFMS

GD-TOFMS Glow discharge time-of-flight mass SPM Scanning probe microscopy... 

The authors have a complementary cross-disciplinary expertise in material science, MS technology, ionization mechanisms, and instrumentation development. Most of the authors were partners of the EMDPA project, an acronym for Elemental and Molecular Depth Profiling Analysis by pulsed radiofrequency (RF) glow discharge time-of-flight mass spectroscopy (GD-TOFMS) within the European Union (EU) FP6 work program [5]. 

FIGURE 41.1 Schematic description of the AP-He GD-TOFMS system for the direct analysis of semiconducting surfaces inset shows photographic image of the He plasma. 

Fast sputtering techniques such as pulsed RF GD-TOFMS induce new considerations on analytical procedures for surface and interface analysis. 

FIGURE 41.4 The different signals obtained using a GD-TOFMS. Reproduced from Reference [19]. 

GD-TOFMS depth profile of Figure 41.6B reveals the chromium,phosphorus, and chlorine-containing layers at approximately 45,260, and 285 nm, respectively, below the surface of anodic film, with the copper-enriched layer immediately beneath the alumina film and the boron-doped outer region, of about 160 nm thickness. 

FIGURE 41.6 (A) TEM micrograph of an anodic alumina film comprising 4 nm thick Cr-, P-, and Cl-containing layers within the anodic film and 2 nm thick Cu-enriched layer beneath the alumina/aluminum interface. (B) RF GD-TOFMS profile of an anodic alumina film comprising 4 nm thick Cr-, P-, and Cl-containing layers within the anodic film and 2-nm thick Cu-enriched layer beneath the alumina/aluminum interface. a.u., arbitrary units. 

L9.6 Example 6. Fast Isotopic Depth Profile Measurement of Thin Layers hy RF GD-TOFMS... 

In this example (Rgure 41.10), multilayered thin anodic tantala films, comprising 0-rich layers of controlled thicknesses and locations, have been characterized by RF GD-TOFMS [24],... 

In this example, we have applied RF GD-TOFMS operating in pulsed mode to characterize two films spin-casted on Si wafer a thin PMMA film (poly(methylme-thacrylate) Figure 41.13A) and a thin PS film (polystyrene Figure 41.13B). 

The GD-MS technique has been employed most commonly for the quantitative analysis of traces and ultratraces in high-purity materials. GDs have been successfully coupled to different types of mass analyser, mainly of sequential nature such as quadrupole and double-focusing spectrometers. However, for analysis with high depth resolution it is required to use mass analysers able to carry out rapid collection of complete mass spectra with high precision and sensitivity, such as TOFMS. It has been demonstrated that, as in GD-OES, depth profile analysis of conducting, semiconducting or insulating materials is possible by GD-TOFMS, with depth resolutions in the order of nanometres. Additionally, GD-TOFMS provides molecular information from samples such... 

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