GaSb film deposition

Fig. 10 SEM images of GaSb films deposited at 350 °C (a) and 550 °C (b) usine t-BusGa-SbEts °...

AFM studies clearly verified these results. The surface of the GaSb film deposited at 500 °C as shown in Figs. 16a and 16b is very homogeneous. At higher magnification, the cubic-shaped morphology of single crystallites can clearly be observed. 

C. Deposition of GaSb Films by Use of Single Source Precursors. 303... 

Zinc telluride, ZnTe, was deposited on quartz, silicon, InAs, and GaSb substrates using Zn[TeSi(SiMe3)3]2 at temperatures between 250 °C and 350 °C. On InAs (orientation not specified) a cubic ZnTe layer was obtained. Problems of stoichiometry are encountered at temperatures below 325 °C because decomposition of the precursor is incomplete, while at higher temperatures (above 350 °C) the deposited ZnTe decomposes into Zn (which evaporates) and involatile elemental tellurium which remains. The results with the analogous cadmium precursor (1.4 torr, 290 °C) indicate that the CdTe films may be of better stoichiometry than those of ZnTe, with XRD results indicating that on a Si substrate the hexagonal phase is predominantly... 

CVD Deposition of Binary AlSb and GaSb Material Films -a Single-Source Approach... 

The forth chapter by S. Schulz also deals with single-source precursors and provides a study case on CVD Deposition of Binary AlSb and GaSb Material Films - a Single-Source Approach . The article summarises recent studies on the synthesis of M-Sb compounds and their potential application as precursors in OMCVD processes. General reaction pathways for the synthesis of Lewis-acid-base adducts R3M-ER3 and heterocycles of the type [R2MSbR2 h (M = Al, Ga) are described. The results of deposition studies are discussed. 

The electrochemical codeposition of GaSb from aqueous solution is difficult due to the large deposition potential difference between the two components. Paolucci et al. [181] formed GaSb thin films via the sequential electrodeposition of Sb and Ga films and a mild thermal annealing at 100 °C. Acid SbCla and alkaline GaOs " introduced as GaCla solutions was employed to minimize the hydrogen evolution and the formation of SbHs. A similar approach was adopted by Kozlov and Bicelli [182]. 

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