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Gallium electron diffraction

Electron diffraction 2-galla- rac/ino-tetraborane, 41 218 gallaborane, 41 214 gallane vapor, 41 204-207 gallium hydrides, 41 185-188 reactive intermediates, 46 110-113 time-resolved, 46 149... [Pg.89]

Gallane, 41 172-173, 196-198 chemical analysis, 41 199, 201 chemical properties, 41 208-209 complexes, 41 175-178 electron diffraction, 41 204-207 2-galla-arachno, tetraborane, 41 216-220 gallaborane, 41 211-216 H NMR spectrum, 41 207-208 IR spectrum, 41 200-202 physical properties, 41 199 search for, 41 173-175 synthesis, 41 198-199 vibrational spectra, 41 200-215 2-Galla-araclino-tetraborane, 41 216-220 "B NMR spectrum, 41 217, 219-220 decomposition of vapor, 41 216-217 electron diffraction, 41 218 structure, 41 217-218 Gallium... [Pg.111]

Dimensions of Some Gaseous Gallium Hydrides as Determined BY Electron Diffraction"... [Pg.204]

Hririlrind A, Hammel A, Mattinsen K-G et al (1992) Molecular structures of monomeric gallium trichloride, indium trichloride and lead tetrachloride by gas electron diffraction. Dalton Trans 2209-2214... [Pg.145]

Dlmethylgallane is best prepared by the reaction of trlmethylgallane with RaOaH at 20, and is a viscous, colourless liquid dimeric structure (20) was confirmed by an electron diffraction study, and several of its reactions are shown in Scheme 6 -. Other gallium structures of note are the two bis(trlmethylsilyl)arsinogallanes,... [Pg.69]

Aluminum Nitride and Gallium Nitride. The surfaces of the 1100 C and 1200°C AIN buffer layers grown on the vicinal and on-axis 6H-SiC(0001)si substrates had a smooth surface morphology. Reflection high energy electron diffraction studies indicated that these films were monocrystalline as-deposited. In contrast, RHEED... [Pg.15]

While the spatial resolution of AES, XPS and SIMS continues to improve, atomic scale analysis can only be obtained by transmission electron microscopy (TEM), combined with energy dispersive X-ray spectroscopy (EDX) or electron energy loss spectroscopy (EELS). EDX detects X-rays characteristic of the elements present and EELS probes electrons which lose energy due to their interaction with the specimen. The energy losses are characteristic of both the elements present and their chemistry. Reflection high-energy electron diffraction (RHEED) provides information on surface slmcture and crystallinity. Further details of the principles of AES, XPS, SIMS and other techniques can be found in a recent publication [1]. This chapter includes the use of AES, XPS, SIMS, RHEED and TEM to study the composition of oxides on nickel, chromia and alumina formers, silicon, gallium arsenide, indium phosphide and indium aluminum phosphide. Details of the instrumentation can be found in previous reviews [2-4]. [Pg.60]

In this study, we report on the GaN nanorod growth by HOMVPE technique with or without using a new precursor, tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(mDTC)3). The structural and optical properties of GaN nanorods were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL). [Pg.737]

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See also in sourсe #XX -- [ Pg.137 ]



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Electron diffraction

Electron diffraction gallium hydrides

Electronic diffraction

Electrons diffracted

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