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Film thickness various

Beta backscatter (thickness measurement) A process in which beta particles (electrons) from a radionuclide source are scattered from a film on a surface into a Geiger counter. By calibration with a known film thickness, the signal from the counter can be used to measure the film thickness. Various radionuclides can be used to give beta particles with different energies. [Pg.569]

Electrolyte adsorption on metals is important in electrochemistry [167,168]. One study reports the adsorption of various anions an Ag, Au, Rh, and Ni electrodes using ellipsometry. Adsorbed film thicknesses now also depend on applied potential. [Pg.414]

The characteristic isotherm concept was elaborated by de Boer and coworkers [90]. By accepting a reference from a BET fit to a standard system and assuming a density for the adsorbed film, one may convert n/rim to film thickness t. The characteristic isotherm for a given adsorbate may then be plotted as t versus P/P. For any new system, one reads t from the standard r-curve and n from the new isotherm, for various P/P values. De Boer and co-work-ers t values are given in Table XVII-4. A plot of t versus n should be linear if the experimental isotherm has the same shape as the reference characteristic isotherm, and the slope gives E ... [Pg.633]

Fig. 10. Reverse-roU, metered film thickness on the appHcator roU divided by gap, tjG, as a function of the ratio of the metering roU speed, U, to apphcator roU speed, U, for various capillary numbers. (—) represents theoretical values ( ) experimental ones and (------) is the lubrication model (11). Fig. 10. Reverse-roU, metered film thickness on the appHcator roU divided by gap, tjG, as a function of the ratio of the metering roU speed, U, to apphcator roU speed, U, for various capillary numbers. (—) represents theoretical values ( ) experimental ones and (------) is the lubrication model (11).
The film thickness 6g depends primarily on the hydrodynamics of the system and hence on the Reynolds number and the Schmidt number. Thus, various correlations have been developed for different geometries in terms of the following dimensionless variables ... [Pg.604]

Emissivity Table 15.5 shows the total heat emissivity of various aluminium surfaces, as a percentage of that of a black body. The figures have been recalculated from the data of Hase. The emissivity of anodised aluminium rises rapidly with film thickness up to 3 fim after which the rate of increase diminishes. [Pg.694]

Bowden and Thompson83 studied the degradation of thin films of various poly(olefin sulfone)s of low olefins due to radiolysis by electron beams at 20 °C. All samples decreased in thickness, indicating scission and depropagation. [Pg.921]

Fig. 1 —Schematic view of various regimes of film thickness. Fig. 1 —Schematic view of various regimes of film thickness.
Fig. 4.2 (Left) XRD patterns (CuK ) of equally thick ZnSe (ca. 1 xm) deposits prepared on H (a) and on CdSe/Ni (b), at a deposition potential of -0.7 V vs. SHE from a typical acidic (pH 3) solution. The reflection intensities for ZnSe(l 11) are denoted in the figure (right) XRD patterns within the low-angle region showing the (111) reflections of ZnSe/CdSe heterostructures (A). Overlayers of ZnSe were deposited on CdSe films of various (111) texture intensities. The substrate features are shown in (B) in full-intensity scale. Evidently, the preferential orientation of the ZnSe crystallites increases with that of the CdSe substrate, up to a constant limiting value. (Reprinted from [16], Copyright 2009, with permission from Elsevier)... Fig. 4.2 (Left) XRD patterns (CuK ) of equally thick ZnSe (ca. 1 xm) deposits prepared on H (a) and on CdSe/Ni (b), at a deposition potential of -0.7 V vs. SHE from a typical acidic (pH 3) solution. The reflection intensities for ZnSe(l 11) are denoted in the figure (right) XRD patterns within the low-angle region showing the (111) reflections of ZnSe/CdSe heterostructures (A). Overlayers of ZnSe were deposited on CdSe films of various (111) texture intensities. The substrate features are shown in (B) in full-intensity scale. Evidently, the preferential orientation of the ZnSe crystallites increases with that of the CdSe substrate, up to a constant limiting value. (Reprinted from [16], Copyright 2009, with permission from Elsevier)...
In the above-mentioned method by Hodgeson el acifluorfen was determined by GC/ECD after the extraction with a 47-mm PS-DVB disk and derivatization with diazomethane. The conditions for GC/ECD were as follows column, DB-5 fused silica (30 m X 0.32-mm i.d., 0.25-p.m film thickness) He carrier gas velocity, 25 cm s (210°C), detector makeup gas, methane-argon (5 95), 30mLmin column temperature, 50 °C (5 min), 10°Cmin to 210 °C (5 min) and to 230 °C (10 min) injection port and detector temperature, 220 and 300 °C, respectively injection method, splitless mode. The recovery of acifluorfen from purified water, dechlorinated tap water and high humic content surface water fortified at 0.5-2.0 ug was 59-150% and the LOD was 25 ngL Acifluorfen after derivatization with various chlorofor-mates was also determined by GC/MS using an SE-54 column (25 m x 0.20-mm i.d., 0.32- um Aim thickness), and the average recovery of acifluorfen fortified between 0.05 and 0.2 ugL was 78%. ... [Pg.464]

An alternative description of membrane stability has been based on hydrodynamic models, originally developed for liquid films in various environments [54-56]. Rupture of the film was rationalized by the instability of symmetrical squeezing modes (SQM) related to the thickness fluctuations. In the simplest form it can be described by a condition [54] d Vdis/dh < where is the interaction contribution related to the dis-... [Pg.83]

Quandt (1962) measured the values of (CfICm - 1) at various axial positions of an air-water mixture flow in a 0.25-in. X 3-in. channel and converted the raw data to the exchange mass flux, pLV(, as shown in Figure 5-23. He also measured the film velocity Vf by injecting a pulse of dye into the liquid film and recording its transport time between two photocells. Such measured data are shown in Figure 5.24. By using the measured values for Vf, the liquid film thickness t may be calculated as... [Pg.373]

After the precursor stock solution is prepared, various techniques can be used to coat the substrate, depending on the solution viscosity, required film thickness and coverage. The most common methods in the semiconductor industry are spin- and dip-coating. Other processes that are used for deposition include spray coating and stamping. A summary of the uses, limitations, and advantages of the various thin film deposition methods is reported in Table 2.2. [Pg.49]

Figure 28 Schematic representa- Figure 29 Changes in the OWG absorbance of PV2+(TFPB )2 tion of the OWG system for detect- thin films of various thickness during IPCT excitation ing photoinduced electrochromism (a) 10.0, (b) 40.4, (c) 64.9, (d) 955, and (e) 179.6 nm. of ultrathin films (S) in the evacuation chamber shown in an inset. Figure 28 Schematic representa- Figure 29 Changes in the OWG absorbance of PV2+(TFPB )2 tion of the OWG system for detect- thin films of various thickness during IPCT excitation ing photoinduced electrochromism (a) 10.0, (b) 40.4, (c) 64.9, (d) 955, and (e) 179.6 nm. of ultrathin films (S) in the evacuation chamber shown in an inset.

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See also in sourсe #XX -- [ Pg.2 , Pg.6 ]




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