Field insulated-gate,

The latest in the field of static devices are MOS-controlled thyristors (MCTs), which are a hybrid of MOSFETs and thyristors. There is yet another device developed in this field, i.e. insulated gate-controlled thyristors (IGCTs). Implementation of these devices in the field of static drives is in the offing. 

See also Field effect transistors (FETs) Heterojunction insulated gate FETs (HIGFETs), 22 164. See also Field effect transistors (FETs) Heterojunction photodiode arrays,... 

H. Shichman andD. Hodges. Modelling and simulation of insulated-gate field effect transistor switching circuits , IEEE Journal of Solid-State Circuits SC3 (1968), 285-289. 

M. S. Mock, A time dependent numerical model of the insulated gate field effect transistor, Solid State Electronics, 24 (1981), pp. 959-966. 

Fig. 38. Hall resistance Rnall of an insulated gate (ln.Mn)As field-effect transistor at 22.5 K as a function of the magnetic field for three different gate voltages. /tnaii s proportional to the magnetization of the (In.Mn)As channel. Upper right inset shows the temperature dependence of / Hall- Let inset shows schematically the gate voltage control of the hole concentration and the conesponding change of the magnetic phase (Ohno et al. 2000).

Fig. 6.19 Evolution of ion-sensitive field-effect transistor (ISFET) from insulated gate FET and ion-selective electrode (ISE)...

Field-Effect Transistors (FETs) are part of all modern pH meters. With the introduction of ion-sensitive field-effect transistors, they have both been brought to the attention of chemists. In order to understand the principles of operation of these new electrochemical devices, it is necessary to include the FET in the overall discussion of the electrochemical cell. The outline of the operation of an insulated gate field-effect transistor is given in Appendix C. 

Fig. 6.31 Insulated gate field-effect transistor (IGFET) with electronically conducting, chemically selective gate...

Field-effect transistors (Appendix C) are miniature cousins of the Kelvin probe. The most common is the insulated gate field-effect transistor. The heart of the insulated gate field-effect transistor is the Metal-Insulator-Semiconductor (MIS) capacitor. Let us form this capacitor from palladium (to be modulated by hydrogen), silicon dioxide (insulator), and p-type silicon (semiconductor), and examine the energy levels in this structure (Fig. 6.32). 

According to the IEEE standard test methods for the characterisation of OFETs [26], the Shockley equations for insulated gate field effect transistors (IGFETs) are used to approximate the field-indueed drain eurrent in the organic material between the drain and source contaets. It should be reeom-mended that the following assumptions form the basis of the applieability of the equations ... 

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a four terminal device consisting of a gate, source, drain, and substrate. MOSFETs have an oxide layer (Si02) between the gate contact and the semiconductor. This insulating gate oxide layer prevents current flow from the semiconductor to the gate. 

The basic idea that guides the insulated-gate field-effect transistor (FET) traces back to the mid-1920s [14], but it was not until 1960 that this early concept could be successfully demonstrated, with the invention of the metal-oxide-semiconductor FET (MOSFET) [15]. Field-effect measurements on copper phthalocyanine films were... 

IGFET insulated-gate field effect transistor... 

The key issue in these sensors is the interface between the ion selective membrane and the contact. The most convenient way to present this problem is in the form of the equivalent electrical circuit in which the resistances and capacitances have their usual electrochemical meaning (Fig.2). It is necessary to include the electrometer (or at least its input stage) in the analysis of these sensors. In most modern instruments the amplifier is an insulated gate field-effect transistor (IGFET) which has the input dc resistance of greater than 10 and the input capacitance on the order of picofarads. 

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