External potential physical realizations

The surface field effect can be realized in a number of ways. The semiconductor can be built into a capacitor and an external potential applied (IGFET), or the field can arise from the chemical effects on the gate materials (CHEMFET). In both cases, change in the surface electric field intensity changes the density of mobile charge carriers in the surface inversion layer. The physical effect that is measured is the change in the electric current carried by the surface inversion layer, called the drain current. 

The electron density of a correlated wave function is denoted here by p such that P—> /3 and the reference-state electron density by p such that P —> —> p. The external potential operator V is the sum over all electrons of some physically realizable one-electron potential function v. The ground-state energy is a functional E[v]. A ground state eigenfunction whose correlated density is p defines an expression of the form... 

The defence-in-depth concept of the ABV is realized in two directions it includes creation of the physical barriers preventing the potential release and propagation of ionizing irradiation and radioactive substances and arrangement of the consecutive levels of protection of these barriers against internal and external impacts. 

Polymer gels can easily be deformed by external physical and chemical stimuli and can generate a force or execute work to the exterior. If such responses can be translated from the microscopic level into a macroscopic scale, a conversion of chemical free energy into mechanical work should be realized. These energy-conversion systems have great potential that may be applied to actuators, sensors, chemical valves, delivery controllers, and permselective separators. These kinds of developments are very active and practical utilization is in progress. 

---