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Energy levels surface states

TAMM LEVELS. Surface states the extra electron energy levels found at ctystal surfaces,... [Pg.1593]

Figure 27. Representation of the competition between direct electron exchange (at around the conduction band edge at the surface) and exchange mediated by surface electron levels. Surface states may exchange electrons with the redox system in the energy interval at around the electrochemical potential. Surface states exchange electrons with the conduction band by electron capture and thermal electron excitation (vertical arrows). Figure 27. Representation of the competition between direct electron exchange (at around the conduction band edge at the surface) and exchange mediated by surface electron levels. Surface states may exchange electrons with the redox system in the energy interval at around the electrochemical potential. Surface states exchange electrons with the conduction band by electron capture and thermal electron excitation (vertical arrows).
Under these conditions, overlapping pore potentials compress the adsoihate molecules into a smaller volume than they would otherwise adsorbate molecules into a smaller volume than they would otherwise occupy. The concept of surface area becomes meaningless and the limiting amount adsorbed is a measure of micropore volume rather than monolayer surface. The determined volumes will be higher than the true pore volumes, since the adsorbate molecules will be in a condensed liquid state which may approach the volume they would occupy in the solid state. Type 1 isotherms may also occur for adsorption on high energy level surfaces [S]. [Pg.42]

Fig. XVIII-19. Band bending with a negative charge on the surface states Eu, E/, and Ec are the energies of the valance band, the Fermi level, and the conduction level, respectively. (From Ref. 186.)... Fig. XVIII-19. Band bending with a negative charge on the surface states Eu, E/, and Ec are the energies of the valance band, the Fermi level, and the conduction level, respectively. (From Ref. 186.)...
At a surface, not only can the atomic structure differ from the bulk, but electronic energy levels are present that do not exist in the bulk band structure. These are referred to as surface states . If the states are occupied, they can easily be measured with photoelectron spectroscopy (described in section A 1.7.5.1 and section Bl.25.2). If the states are unoccupied, a teclmique such as inverse photoemission or x-ray absorption is required [22, 23]. Also, note that STM has been used to measure surface states by monitoring the tunnelling current as a fiinction of the bias voltage [24] (see section BT20). This is sometimes called scamiing tuimelling spectroscopy (STS). [Pg.293]

Note that in core-level photoelectron spectroscopy, it is often found that the surface atoms have a different binding energy than the bulk atoms. These are called surface core-level shifts (SCLS), and should not be confiised with intrinsic surface states. Au SCLS is observed because the atom is in a chemically different enviromuent than the bulk atoms, but the core-level state that is being monitored is one that is present in all of the atoms in the material. A surface state, on the other hand, exists only at the particular surface. [Pg.293]

Electronic structure theory describes the motions of the electrons and produces energy surfaces and wavefiinctions. The shapes and geometries of molecules, their electronic, vibrational and rotational energy levels, as well as the interactions of these states with electromagnetic fields lie within the realm of quantum stnicture theory. [Pg.2154]

Similar calculations with consideration of the GP effect have also been reported [12]. A total of 24, 24, and 50 levels of Aj, A2, and E symmetries have been found below tbe dissociation threshold of the lower surface, —1.0560 eV. These are therefore genuine bound states the cone states lying above sucb a dissociation threshold are pseudobound states. The lowest levels of A, A2, and E symmetries are found to lie at —1.3475, —1.3438, and —1.3989eV, respectively. The notable feature is that the energy levels have been shifted due to the... [Pg.597]

Morrison, S. R. Measurement of Surface State Energy Levels of One-Equivalent Adsorbates on ZnO. Surface Set. 27 (1971) pp. 586-604. [Pg.1316]

In the absence of either surface states, which may pin the Fermi level at the interface between the dielectric and the electrode, the energy barriers, which in turn... [Pg.196]

A value close to 4.8 V has been obtained in four different laboratories using quite different approaches (solid metal/solution Ay, 44 emersed electrodes,40,47 work function changes48), and is apparently supported by indirect estimates of electronic energy levels. The consistency of results around 4.8 V suggests that the value of 4.44 V is probably due to the value of 0 not reflecting the actual state of an Hg jet or pool. According to some authors,44 the actual value of 0 for Hg in the stream should be 4.8 V in that the metal surface would be oxidized. [Pg.14]


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