Electronic structure band theory

Our results will be based on the one electron energy band theory of solids (13) that forms the basis for the present-day understanding of metal and semiconductor physics. It is the counterpart of the chemist s molecular orbital theory, and we shall try to relate our results back to the underlying atomic structure. 

Krasovskll E E and Schattke W 1997 Surface electronic structure with the linear methods of band theory Phys. Rev. B 56 12 874... 

Simply doing electronic structure computations at the M, K, X, and T points in the Brillouin zone is not necessarily sufficient to yield a band gap. This is because the minimum and maximum energies reached by any given energy band sometimes fall between these points. Such limited calculations are sometimes done when the computational method is very CPU-intensive. For example, this type of spot check might be done at a high level of theory to determine whether complete calculations are necessary at that level. 

The optimised interlayer distance of a concentric bilayered CNT by density-functional theory treatment was calculated to be 3.39 A [23] compared with the experimental value of 3.4 A [24]. Modification of the electronic structure (especially metallic state) due to the inner tube has been examined for two kinds of models of concentric bilayered CNT, (5, 5)-(10, 10) and (9, 0)-(18, 0), in the framework of the Huckel-type treatment [25]. The stacked layer patterns considered are illustrated in Fig. 8. It has been predicted that metallic property would not change within this stacking mode due to symmetry reason, which is almost similar to the case in the interlayer interaction of two graphene sheets [26]. Moreover, in the three-dimensional graphite, the interlayer distance of which is 3.35 A [27], there is only a slight overlapping (0.03-0.04 eV) of the HO and the LU bands at the Fermi level of a sheet of graphite plane [28,29],... 

Experimentally it is found that the Fe-Co and Fe-Ni alloys undergo a structural transformation from the bee structure to the hep or fee structures, respectively, with increasing number of valence electrons, while the Fe-Cu alloy is unstable at most concentrations. In addition to this some of the alloy phases show a partial ordering of the constituting atoms. One may wonder if this structural behaviour can be simply understood from a filling of essentially common bands or if the alloying implies a modification of the electronic structure and as a consequence also the structural stability. In this paper we try to answer this question and reproduce the observed structural behaviour by means of accurate alloy theory and total energy calcul ions. 

Switendick was the first to apply modem electronic band theory to metal hydrides [5]. He compared the measured density of electronic states with theoretical results derived from energy band calculations in binary and pseudo-binary systems. Recently, the band structures of intermetallic hydrides including LaNi5Ht and FeTiH v have been summarized in a review article by Gupta and Schlapbach [6], All exhibit certain common features upon the absorption of hydrogen and formation of a distinct hydride phase. They are ... 

In the electron transfer theories discussed so far, the metal has been treated as a structureless donor or acceptor of electrons—its electronic structure has not been considered. Mathematically, this view is expressed in the wide band approximation, in which A is considered as independent of the electronic energy e. For the. sp-metals, which near the Fermi level have just a wide, stmctureless band composed of. s- and p-states, this approximation is justified. However, these metals are generally bad catalysts for example, the hydrogen oxidation reaction proceeds very slowly on all. sp-metals, but rapidly on transition metals such as platinum and palladium [Trasatti, 1977]. Therefore, a theory of electrocatalysis must abandon the wide band approximation, and take account of the details of the electronic structure of the metal near the Fermi level [Santos and Schmickler, 2007a, b, c Santos and Schmickler, 2006]. 

It is important to realize that each of the electronic-structure methods discussed above displays certain shortcomings in reproducing the correct band structure of the host crystal and consequently the positions of defect levels. Hartree-Fock methods severely overestimate the semiconductor band gap, sometimes by several electron volts (Estreicher, 1988). In semi-empirical methods, the situation is usually even worse, and the band structure may not be reliably represented (Deak and Snyder, 1987 Besson et al., 1988). Density-functional theory, on the other hand, provides a quite accurate description of the band structure, except for an underestimation of the band gap (by up to 50%). Indeed, density-functional theory predicts conduction bands and hence conduction-band-derived energy levels to be too low. This problem has been studied in great detail, and its origins are well understood (see, e.g., Hybertsen and Louie, 1986). To solve it, however, requires techniques of many-body theory and carrying out a quasi-particle calculation. Such calculational schemes are presently prohibitively complex and too computationally demanding to apply to defect calculations. 

Resonance Raman spectroscopy has been applied to studies of polyenes for the following reasons. The Raman spectrum of a sample can be obtained even at a dilute concentration by the enhancement of scattering intensity, when the excitation laser wavelength is within an electronic absorption band of the sample. Raman spectra can give information about the location of dipole forbidden transitions, vibronic activity and structures of electronically excited states. A brief summary of vibronic theory of resonance Raman scattering is described here. 

The general theory of 4.3 can now be applied, with some modification, due to the fact that the substrate electronic structure consists of discrete states arising from the metal film, in addition to the delocalized band states of the semiconductor. The adatom GF (5.56) can be written as (cf. (4.70))... 

It is well known that the flotation of sulphides is an electrochemical process, and the adsorption of collectors on the surface of mineral results from the electrons transfer between the mineral surface and the oxidation-reduction composition in the pulp. According to the electrochemical principles and the semiconductor energy band theories, we know that this kind of electron transfer process is decided by electronic structure of the mineral surface and oxidation-reduction activity of the reagent. In this chapter, the flotation mechanism and electron transferring mechanism between a mineral and a reagent will be discussed in the light of the quantum chemistry calculation and the density fimction theory (DFT) as tools. 

All materials in the Lai- r ,Coi- Fe/)3-(5 (LSCF) family of materials have electronic transference numbers approaching unity. The electronic structure LSC and LSF has often been described in terms of partially delocalized O p—Co band states based on the tg and e levels of crystal-field theory. In... 

Band Theory of Metals, Three approaches predict the electronic band structure of metals. The first approach (Kronig-Penney), the periodic potential method, starts with free electrons and then considers nearly bound electrons. The second (Ziman) takes into account Bragg reflection as a strong disturbance in the propagation of electrons. The third approach (Feynman) starts with completely bound electrons to atoms and then considers a linear combination of atomic orbitals (LCAOs). 

Next, we consider the electronic structure of a metal formed from atoms each contributing two electrons. We have seen that overlap of v orbitals in N atoms produces A/ molecular orbitals and that each orbital can accommodate two electrons. The maximum number of electrons that can be placed in N orbitals is 2N, When each atom contributes two electrons, there are 2A/ electrons to be placed in molecular orbitals. Thus, when each atom contributes two electrons, the band is full and the material is an insulator (Fig. 3,12b). The major success of band theory rests on the explanation of the three types of electrical conductors (Fig. 3.12). 

So far we have assumed that the electronic structure of the crystal consists of one band derived, in our approximation, from a single atomic state. In general, this will not be a realistic picture. The metals, for example, have a complicated system of overlapping bands derived, in our approximation, from several atomic states. This means that more than one atomic orbital has to be associated with each crystal atom. When this is done, it turns out that even the equations for the one-dimensional crystal cannot be solved directly. However, the mathematical technique developed by Baldock (2) and Koster and Slater (S) can be applied (8) and a formal solution obtained. Even so, the question of the existence of otherwise of surface states in real crystals is diflBcult to answer from theoretical considerations. For the simplest metals, i.e., the alkali metals, for which a one-band model is a fair approximation, the problem is still difficult. The nature of the difficulty can be seen within the framework of our simple model. In the first place, the effective one-electron Hamiltonian operator is really different for each electron. If we overlook this complication and use some sort of mean value for this operator, the operator still contains terms representing the interaction of the considered electron with all other electrons in the crystal. The Coulomb part of this interaction acts in such a way as to reduce the effect of the perturbation introduced by the existence of a free surface. A self-consistent calculation is therefore essential, and the various parameters in our theory would have to be chosen in conformity with the results of such a calculation. 

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