Self-consistent calculations

Inglesfield J E and Benesh G A 1988 Surface electronic structure embedded self-consistent calculations Phys. Rev. 

Obviously, to discuss the possibility of such a phase transition one should at least carry out a fully self-consistent calculation for different lattice constants. 

Similar calculations were carried out for the single impurity systems, niobium in Cu, vanadium in Cu, cobalt in Cu, titanium in Cu and nickel in Cu. In each of these systems the scattering parameters for the impurity atom (Nb, V, Co, Ti or Ni) were obtained from a self consistent calculation of pure Nb, pure V, pure Co, pure Ti or pure Ni respectively, each one of the impurities assumed on an fee lattice with the pure Cu lattice constant. The intersection between the calculated variation of Q(A) versus A (for each impurity system) with the one describing the charge Qi versus the shift SVi according to eqn.(l) estimates the charge flow from or towards the impurity cell.The results are presented in Table 2 and are compared with those from Ref.lc. A similar approach was also found succesful for the case of a substitutional Cu impurity in a Ni host as shown in Table 2. 

Figure 6.32 Self-consistent calculation of the electronic structure of CO adsorbed on Al and Pt. The sharp 5

Modern theories of electronic structure at a metal surface, which have proved their accuracy for bare metal surfaces, have now been applied to the calculation of electron density profiles in the presence of adsorbed species or other external sources of potential. The spillover of the negative (electronic) charge density from the positive (ionic) background and the overlap of the former with the electrolyte are the crucial effects. Self-consistent calculations, in which the electronic kinetic energy is correctly taken into account, may have to replace the simpler density-functional treatments which have been used most often. The situation for liquid metals, for which the density profile for the positive (ionic) charge density is required, is not as satisfactory as for solid metals, for which the crystal structure is known. 

For H at T in Ge, Pickett et al. (1979) carried out empirical-pseudopotential supercell calculations. Their band structures showed a H-induced deep donor state more than 6 eV below the valence-band maximum in a non-self-consistent calculation. This binding energy was substantially reduced in a self-consistent calculation. However, lack of convergence and the use of empirical pseudopotentials cast doubt on the quantitative accuracy. More recent calculations (Denteneer et al., 1989b) using ab initio norm-conserving pseudopotentials have shown that H at T in Ge induces a level just below the valence-band maximum, very similar to the situation in Si. The arguments by Pickett et al. that a spin-polarized treatment would be essential (which would introduce a shift in the defect level of up to 0.5 Ry), have already been refuted in Section II.2.d. 

Thus far, I have mainly discussed neutral impurities. From the treatment of the electronic states, however, it should be clear that occupation of the defect level with exactly one electron is by no means required. In principle, zero, one, or two electrons can be accommodated. To alter the charge state, electrons are taken from or removed to a reservoir the Fermi level determines the energy of electrons in this reservoir. In a self-consistent calculation, the position of the defect levels in the band structure changes as a function of charge state. For H in Si, it was found that with H fixed at a particular site, the defect level shifted only by 0.1 eV as a function of charge state (Van de Walle et al., 1989). 

Note that the evaluation of (6.51) does not require a self-consistency calculation. The bulk CP ab(E) is, as we have seen, calculated self-consistently in (6.39), but once that has been done, the computation of the surface CP as E) via (6.51) is straightforward. 

Figure 6 shows the behavior of the reduced monomer density p z)Rp/Np at increasing anchoring density. The stretching of the chains with increasing surface coverage, which is due to the repulsion between monomers, is evident. This plot has to be compared with Fig. 3b, where the same type of rescaling has been used. However, note that at this point, direct and quantitative comparison is not possible, since it is a priori not clear which value of the interaction parameter /3 in the self-consistent calculation corresponds to which set of simulation parameters ct, N, pa. 

So far we have assumed that the electronic structure of the crystal consists of one band derived, in our approximation, from a single atomic state. In general, this will not be a realistic picture. The metals, for example, have a complicated system of overlapping bands derived, in our approximation, from several atomic states. This means that more than one atomic orbital has to be associated with each crystal atom. When this is done, it turns out that even the equations for the one-dimensional crystal cannot be solved directly. However, the mathematical technique developed by Baldock (2) and Koster and Slater (S) can be applied (8) and a formal solution obtained. Even so, the question of the existence of otherwise of surface states in real crystals is diflBcult to answer from theoretical considerations. For the simplest metals, i.e., the alkali metals, for which a one-band model is a fair approximation, the problem is still difficult. The nature of the difficulty can be seen within the framework of our simple model. In the first place, the effective one-electron Hamiltonian operator is really different for each electron. If we overlook this complication and use some sort of mean value for this operator, the operator still contains terms representing the interaction of the considered electron with all other electrons in the crystal. The Coulomb part of this interaction acts in such a way as to reduce the effect of the perturbation introduced by the existence of a free surface. A self-consistent calculation is therefore essential, and the various parameters in our theory would have to be chosen in conformity with the results of such a calculation. 

Appelbaum, J. A., and Hamann, D. R. (1973a). Surface potential, charge density, and ionization potential of Si(lll) - a self-consistent calculation. Phys. Rev. Lett. 32, 225-228. 

Drakova, D., Doyen. G., and Trentini, F. V. (1985). Self-consistent calculations of rare-gas-transition-metal interaction potentials. Phys. Rev. B 32, 6399-6423. 

The 5 f contribution in the valence band is however, probably less than one state, which is equivalent to 8% f character in the valence band. This type of contribution is obtained by later, self-consistent calculations . A contribution of a total number of 0.6... 

Early band structure calculations for the actinide metals were made both with and without relativistic effects. As explained above, at least the mass velocity and Darwin shifts should be included to produce a relativistic band structure. For this reason we shall discuss only the relativistic calculations. There were some difficulties with the f-band structure in these studies caused by the f-asymptote problem , which have since been elegantly solved by linear methods . Nevertheless the non-self-consistent RAPW calculations for Th through Bk indicated some interesting trends that have also been found in more recent self-consistent calculations ... 

Self-consistent calculations for actinide clusters have been made using cellular multiple scattering techniques and through linear combinations of atomic orbitals. Band calculations have been made using the self-consistent RKKR and... 

Again, as in the one-band case, it is necessary to perform self-consistent calculations (for a given previously converged po(T) set) till the overall convergence is reached i.e. the on-site effective levels as well as the hoppings are converged. Once achieved, the effective Hamiltonian iLg// can be used... 

Fig. 3.6 Binding energy curves for the hydrogen molecule (lower panel). HF and HL are the Hartree-Fock and Heitler-London predictions, whereas LDA and LSDA are those for local density and local spin density approximations respectively. The upper panel gives the local magnetic moment within the LSDA self-consistent calculations. (After Gunnarsson and Lundquist (1976).)...

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