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Electron surface state studies

Fig. 34 are presented as ij-U-y curves. Without sulfide treatment a 1.05 eV band gap is resolved, whereas the gap shrinks completely after passivation. Though results seem in line with a passivation of electronic surface states by the sulfide treatment, since no band gap is resolved on clean GaAs(llO) in vacuum [53] , one may wonder whether the results of Fig. 34 a are not related to the overlayer instead of the substrate. Recent studies have indeed shown that the density of states is not reduced after sulfur coating [87], in contrast to initial assumptions [86]. Moreover, thermal desorption of the sulfide layer opens a band gap [164], as in Fig. 34 b, which is consistent with the existence of the monolayer of oxygen at the interface between GaAs and the layer [161]. In vacuum a wide band gap is also found locally at places where oxygen is adsorbed on clean GaAs(llO) [53]. [Pg.51]

Mechanisms of electrochemical and photoelectrochemical deposition of metal selenide clusters (Me = Pb, Cd, Zn, Bi, In) onto the surface as well as into the selenium films have been studied. These clusters are formed as a result of underpotential and overpotential deposition of the metals onto Se. Photoinduced underpotential deposition of Bi onto Se was used to cover selenium colloidal particles with BiiSes clusters. The PbSe and Bi2Sc3 clusters modify the Se surface and form electronic surface states in the Se bandgap, thus promoting electron exchange processes between the valence band and redox species in solution and the rise of the subbandgap photocurrent. [Pg.369]

In comparing the spectral features of all three optical experiments dealing with the Cu(llO) surface it is obvious that the resonance at 2.1 eV is present and dominant in all data sets. The sensitivity of electronic surface states (of clean Cu(llO)) to adsorbed oxygen (and probably other adsorbates) causes in this case the optical techniques to be quite sensitive to adsorbates, enabling their use to monitor the kinetics of adsorption/desorption kinetics, for example. Since electronic surface states are quite common for a number of semiconductor surfaces, it is understandable that optical response investigations are sensitive to adsorbates especially on these surfaces. Hence they are frequently employed to study kinetic phenomena involving adsorption or thin film growth. [Pg.58]

In Chapter VI, Ohm and Deumens present their electron nuclear dynamics (END) time-dependent, nonadiabatic, theoretical, and computational approach to the study of molecular processes. This approach stresses the analysis of such processes in terms of dynamical, time-evolving states rather than stationary molecular states. Thus, rovibrational and scattering states are reduced to less prominent roles as is the case in most modem wavepacket treatments of molecular reaction dynamics. Unlike most theoretical methods, END also relegates electronic stationary states, potential energy surfaces, adiabatic and diabatic descriptions, and nonadiabatic coupling terms to the background in favor of a dynamic, time-evolving description of all electrons. [Pg.770]

A procedure for proplnts is presented by J.W. French (Ref 27), who used both OM and EM (electron microscope) to study plastisol NC curing. He found that the cure time of plastisol NC is a logarithmic function of temp, and direct functions of chemical compn and total available surface area, as well as of particle size distribution. It should be noted that extensive use of statistics is required as a time-saving means of interpreting particle size distribution data. The current state-of-the-art utilizes computer techniques to perform this function, and in addition, to obtain crystal morphology data (Ref 62)... [Pg.144]

Kolb and Franke have demonstrated how surface reconstruction phenomena can be studied in situ with the help of potential-induced surface states using electroreflectance (ER) spectroscopy.449,488,543,544 The optical properties of reconstructed and unreconstructed Au(100) have been found to be remarkably different. In recent model calculations it was shown that the accumulation of negative charges at a metal surface favors surface reconstruction because the increased sp-electron density at the surface gives rise to an increased compressive stress between surface atoms, forcing them into a densely packed structure.532... [Pg.86]

The methods of X-ray diffraction usually were used to determine the orientation of crystal faces. Low-energy electron diffraction (LEED) gives more accurate results. However, such measurements provide an exact characterization only of the initial surface state of the electrodes. It is more difficult to determine the surface state after the electrochemical studies, and even more so during these studies. [Pg.531]

VEM excitation energy relaxati( i. Such ways (channels) be probably chemisorption with charge transfer, production of phonons, ejection of electrons from surface states and traps, and the like. The further studies in this field will, obviously, make it possible to give a more complete characteristic of the VEM interaction with the surface of solid bodies and the possibilities of VEM detecting with the aid of semiconductor sensors. [Pg.343]


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Electron studies

Electron “surface states

Surface electronic

Surface electrons

Surface states

Surface study

Surfaces studied

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