Semiconductor electrodes surface states

Fig. 10-20. Capture of photogenerated holes and cathodically iiyected holes in surface states on n-type semiconductor electrodes (a) surface states capture photogenerated holes at the rate followed by anodic hole transfer to redox particles, (b) surface states capture cathodically injected holes.

At present, the microwave electrochemical technique is still in its infancy and only exploits a portion of the experimental research possibilities that are provided by microwave technology. Much experience still has to be gained with the improvement of experimental cells for microwave studies and in the adjustment of the parameters that determine the sensitivity and reliability of microwave measurements. Many research possibilities are still unexplored, especially in the field of transient PMC measurements at semiconductor electrodes and in the application of phase-sensitive microwave conductivity measurements, which may be successfully combined with electrochemical impedance measurements for a more detailed exploration of surface states and representative electrical circuits of semiconductor liquid junctions. 

Electrochemical reactions at semiconductor electrodes have a number of special features relative to reactions at metal electrodes these arise from the electronic structure found in the bulk and at the surface of semiconductors. The electronic structure of metals is mainly a function only of their chemical nature. That of semiconductors is also a function of other factors acceptor- or donor-type impurities present in bulk, the character of surface states (which in turn is determined largely by surface pretreatment), the action of light, and so on. Therefore, the electronic structure of semiconductors having a particular chemical composition can vary widely. This is part of the explanation for the appreciable scatter of experimental data obtained by different workers. For reproducible results one must clearly define all factors that may influence the state of the semiconductor. 

No "Jilt has so far been assumed that the semiconductor-electrolyte interphase does not contain either ions adsorbed specifically from the electrolyte or electrons corresponding to an additional system of electron levels. These surface states of electrons are formed either through adsorption (the Shockley levels) or through defects in the crystal lattice of the semiconductor (the Tamm levels). In this case—analogously as for specific adsorption on metal electrodes—three capacitors in series cannot be used to characterize the semiconductor-electrolyte interphase system and Eq. (4.5.6) must include a term describing the potential difference for surface states. 

Degeneracy can be introduced not only by heavy doping, but also by high density of surface states in a semiconductor electrode (pinning of the Fermi level by surface states) or by polarizing a semiconductor electrode to extreme potentials, when the bands are bent into the Fermi level region. 

The photocurrent density (/ph) is proportional to the light intensity, but almost independent of the electrode potential, provided that the band bending is sufficiently large to prevent recombination. At potentials close to the flatband potential, the photocurrent density again drops to zero. A typical current density-voltage characteristics of an n-semiconductor electrode in the dark and upon illumination is shown in Fig. 5.61. If the electrode reactions are slow, and/or if the e /h+ recombination via impurities or surface states takes place, more complicated curves for /light result. 

Since the electron state density near the Fermi level at the degenerated surface (Fermi level pinning) is so high as to be comparable with that of metals, the Fermi level pinning at the surface state, at the conduction band, or at the valence band, is often called the quasi-metallization of semiconductor surfaces. As is described in Chap. 8, the quasi-metallized surface occasionally plays an important role in semiconductor electrode reactions. 

Fig. 6-99. An interfacial electric double layer on semiconductor electrodes a = charge of surface states 0.1 = interfadal charge of adsorbed ions IHP = inner Helmholtz plane.

Simple calculation gives a comparable distribution of the electrode potential in the two layers, (64< >h/64( sc) = 1 at the surface state density of about 10cm" that is about one percent of the smface atoms of semiconductors. Figure 5—40 shows the distribution of the electrode potential in the two layers as a function of the surface state density. At a surface state density greater than one percent of the surface atom density, almost all the change of electrode potential occurs in the compact layer, (6A /5d )>l, in the same way as occurs with metal electrodes. Such a state of the semiconductor electrode is called the quasi-metallic state or quasi-metallization of the interface of semiconductor electrodes, which is described in Sec. 5.9 as Fermi level pinning at the surface state of semiconductor electrodes. 

Fig. S-41. Band edge levels and Fermi level of semiconductor electrode (A) band edge level pinning, (a) flat band electrode, (b) under cathodic polarization, (c) under anodic polarization (B) Fermi level pinning, (d) initial electrode, (e) under cathodic polarization, (f) imder anodic polarization, ep = Fermi level = conduction band edge level at an interface Ev = valence band edge level at an interface e = surface state level = potential across a compact layer.

In the state of Fermi level pinning, the Fermi level at the interface is at the surface state level both where the level density is high and where the electron level is in the state of degeneracy similar to an allowed band level for electrons in metals. The Fermi level pinning is thus regarded as quasi-metallization of the interface of semiconductor electrodes, making semiconductor electrodes behave like metal electrodes at which all the change of electrode potential occurs in the compact layer. 

The interfacial excess charge of semiconductor electrodes consists of the space charge osc on the semiconductor side the charge of surface states o the charge Oh of interfacial hydroxyl groups the charge Oms of adsorbed ions in the compact... 

For simple semiconductor electrodes on which the charge of surface states and the charge of adsorbed ions are zero or remain constant, the flat band potential is obtained from Eqn. 5-84 to give Eqn. 5-87 ... 

Fig. 6-53. Interfadal charges, electron levels and electrostatic potential profile across an electric double layer with contact adsorption of dehydrated ions on semiconductor electrodes ogc = space charge o = charge of surface states = ionic charge due to contact adsorption dsc = thickness of space charge layer da = thickness of compact la3rer.

The interface of semiconductor electrodes iiequently contains more or less localized electron levels called either surface states or interface states. In this textbook we use the term of surface states. 

Fig. 6-68. Surface states created by oovsdently adsorbed particles on semiconductor electrodes BL = bonding level in adsorption = electron donor level D ABL = antibonding level in adsorption = electron acceptor level A W. = probability density of adsorption-induced surface state.

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