Electrical properties of films

Salmeron M, Neubauer G, Folch A, Tomitori M, Ogletree D F and Sautet P 1993 Viscoelastic and electrical properties of self-assembled monolayers on Au(111) films Langmuirs 3600... 

Procarione W L and Kauffman J W 1974 The electrical properties of phospholipid bilayer Langmuir films Chem. Phys. Lipids 12 251-60... 

Impurities that can negatively affect the physical and electrical properties of the metallisation layer can originate from several sources, particularly the deposition source and the gaseous environment. Impurities stemming from the source bombard the surface of the growing film and get trapped in the metal layer. 

Diffusion. Another technique for modifying the electrical properties of siUcon and siUcon-based films involves introducing small amounts of elements having differing electrical compositions, dopants, into substrate layers. Diffusion is commonly used. There are three ways dopants can be diffused into a substrate film (/) the surface can be exposed to a chemical vapor of the dopant at high temperatures, or (2) a doped-oxide, or (J) an ion-implanted layer can be used. Ion implantation is increasingly becoming the method of choice as the miniaturization of ICs advances. However, diffusion is used in... 

Of the many properties of films in their successive stages, those most commonly studied nowadays are the magnetic, electrical and mechanical ones. The magnetic properties and uses of thin films, especially multilayers, have been outlined in Section 7.4 and need not be repeated here however, it is worth pointing out an excellent survey of magnetic multilayers (Grunberg 2000). Electrical properties have been covered by Coutts (1974). 

To dissociate molecules in an adsorbed layer of oxide, a spillover (photospillover) phenomenon can be used with prior activation of the surface of zinc oxide by particles (clusters) of Pt, Pd, Ni, etc. In the course of adsorption of molecular gases (especially H2, O2) or more complex molecules these particles emit (generate) active particles on the surface of substrate [12], which are capable, as we have already noted, to affect considerably the impurity conductivity even at minor concentrations. Thus, the semiconductor oxide activated by cluster particles of transition metals plays a double role of both activator and analyzer (sensor). The latter conclusion is proved by a large number of papers discussed in detail in review [13]. The papers cited maintain that the particles formed during the process of activation are fairly active as to their influence on the electrical properties of sensors made of semiconductor oxides in the form of thin sintered films. 

If the above comparison of the properties of metal atoms with those of hydrogen deposited on the surface of a solid body (semiconductor) is correct, the effect of their adsorption on electric properties of semiconductor oxide films will be similar to features accompanying adsorption of hydrogen atoms. The atoms of hydrogen are very mobile and, in contrast to metal atoms, are capable of surface recombination resulting in formation of saturated molecules with strong covalent bond. 

The above results on detection of trace concentrations of oxygen by sine oxide films (and titanium oxide films, to a lesser degree), as well as the results on detection of alkyl radicals, which are acceptors of semiconductor electrons, show that the behaviour and electric properties of... 

TCNQ-Polyphosphazene Systems. Tetracyanoquinodimethane (XX) salts crystallize in the form of stacked arrays that allow electrical semiconductivity (42). Although this phenomenon has been studied in many laboratories, it has not been possible to fabricate conductive films or wires from these substances because of the brittleness that is characteristic of organic single crystals. However, it seemed possible that, if the flexibility and ease of fabrication of many polyphosphazenes could be combined with the electrical properties of TCNQ, conducting polymers might be accessible. 

LAJs incorporating polymer films on top of the organic SAMs showed that these junctions allow for studying the correlation between electrical properties and chemical structure. Both de Boer et al. [80] (Fig. 7) and Rampi et al. [79], by spin-coating respectively PEDOT PSS and PPV on top of alkane SAMs, extracted from the electrical measurement [i = 0.57 A-1 and [j = 0.90 A-1. Rampi et al. also showed that it is possible to measure electrical properties of polyphenyl chains with a [1 0.61 A, and that the PPV polymer layer is much more conductive that... 

Merklein, S. Sporn, D. Schonecker, A. 1992. Crystallization behavior and electrical properties of wet-chemically deposited lead zirconate titanate. In Ferroelectric Thin Films III, edited by Tuttle, B. A. Myers, E. R. Desu, S. B. Larsen, P. K. Mat. Res. Soc. Symp. Proc. 310 263-268. 

Schneller,T. Waser, R. 2007. Chemical modifications of Pb(Zr0.3,Ti07)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films. J. Sol-Gel Sci Tech. 42 337-352. 

Haider, S. Schneller, T. Waser, R. Thomas, F. 2007. Microstructure and electrical properties of BaTi03 and (Ba,Sr)Ti03 ferroelectric thin films on nickel electrodes. /. Sol-Gel Sci. Tech. 42 203-207. 

Given the toxic nature of hydrazine, it is clearly desirable to reduce the amount of hydrazine used in the spinning process. To this end, high-quality tin chalcogenide films spun using a mixture of water and hydrazine (20% hydrazine in water by volume) have also been demonstrated.47 The electrical properties of these films are comparable with those achieved from films deposited from pure hydrazine. 

Schottky Diode Growth. The electrical properties of the films deposited using SSP 1 (Fig. 6.13) were evaluated by current versus voltage (I-V) measurements recorded for the thin films using thermally evaporated aluminum contacts (10mm2), to make Schottky barrier diodes (see Fig. 6.14). 

Hankare, P. P. Chate, P. A. Delekar, S. D. Bhuse, V. M. Asabe, M. R. Jadhav, B. V. Garadkar, K. M. 2006. Structural and opto-electrical properties of molybdenum diselenide thin films deposited by chemical bath method. / Cryst. Growth 291 40-44. 

Kale, R. B. Lokhande, C. D. 2005. Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films. Appl. Surf. Sci. 252 929-938. 

Mane, R. S. Lokhande, C. D. 2003. Studies on structural, optical and electrical properties of indium sulfide thin films. Mater. Chem. Phys. 78 15-17. 

Wang, L. Kang, S. Mu, J. 2006. Electrical properties of Ag thin films deposited by the improved SILAR method./. Dispersion Sci. Technol. 27 393-397. 

Ruiz de Larramendi I, Lopez Anton R, Ruiz de Larramendi JI, Baliteau S, Mauvy F, Grenier JC et al. Structural and electrical properties of thin films of Prn Srn, Fen Nin /)-< s. 

Polymer films may also be synthesized by direct chemical routesT 101. These chemical synthesis routes generally involve some form of electrophilic substitution using Grignard reagents or other modified precursors. The purity and electrical properties of the films produced from the chemical route are generally poorer than... 

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