Edge light

Cutting-edge light and electron microscopical methods... 

The effect is widely used in signs and display devices to make them self illuminated. Edge lighted signs and panels are widely used in aircraft and for general display and office use. The basic design of signs... 

Figure 3.2 Hole excitation by weak (a) and intense (b, c) Urbach-edge light.

Then remove the strip and dry it in a stream of cold air, either from a blower, or by pinning it to the lower edge of a fume-cupboard window having a vigorous draught already in operation. Then spray the strip lightly but uniformly with the ninhydrin solution (D) in a fume-cupboard, and dry as before. 

Although the cross-sectional shape of the spinneret hole direcdy affects the cross-sectional shape of the fiber, the shapes are not identical. Round holes produce filaments with an approximately round cross section, but with crenelated edges triangular holes produce filaments in the form of a "Y." Different cross sections are responsible for a variety of properties, eg, hand, luster, or cover, in the finished fabric. Some fibers may contain chemical additives to provide light-fastness and impart fire retardancy. These are usually added to the acetate solution before spinning,... 

It has been shown that keratin [9008-18-8] and not ceUulose-type fibers, are dyed. It is speculated that a lead—sulfur—keratin complex is formed. The color penetrates the hair fiber to a limited extent, forming a ring around the outside edge and imparting a lifeless appearance. Once developed, the color cannot be removed. The shades are limited yeUows or light browns. Appealing mainly to men, the products are often called color restorers because of the... 

These processes are considerably more complex in actual CMOS fabrication. First, the lower layers of a CMOS stmcture typically have a twin-tub design which includes both PMOS and NMOS devices adjacent to each other (see Fig. 3b). After step 1, a mask is opened such that a wide area is implanted to form the -weU, followed by a similar procedure to create the -weU. Isolation between active areas is commonly provided by local oxidation of sihcon (LOCOS), which creates a thick field oxide. A narrow strip of lightly doped drain (LDD) is formed under the edges of the gate to prevent hot-carrier induced instabiUties. Passivation sidewalls are used as etch resists. A complete sequence of fabrication from wafer to packaged unit is shown in Figure 10. 

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