DRAM dynamic random access

Note These specifications were developed at Balazs Analytical Laboratory. Abbreviations are defined as follows DRAM, dynamic random access memory VLSI, very-large-scale integration ULSI, ultralarge-scale integration TOC, total oxidizable carbon THM, trihalomethane SEM, scanning electron microscopy and EPI, epifluorescence... 

DRAM (dynamic random access memory) — A type of a commonly used random access memory that allows the stored data to be accessed in any order, i.e., at random, not just in sequence. That type of computer memory stores each bit of data in a separate capacitor charged and discharged by only one logic element transistor. However, the DRAM capacitors are not ideal and hence leak electrons the information eventually fades unless the capacitor charge is periodically refreshed (circa every 64 ms). This makes this type of memory more power... 

The alloy W-lOTi is used as a sputtering target in the manufacture of microelectronics devices, such as VLSI, ULSI (very large resp. ultralarge-scale integration), and DRAM (dynamic random access memory) chips. Thin W-Ti layers are sputtered onto silicon substrates and act as a diffusion barrier against aluminum (intercormect). 

One underlying reason for the Japanese success was its impressive commercializing of a new memory chip, the DRAM (Dynamic Random Access Memory), initially introduced by Intel in 1971. As its New Series Project was being fulfilled, MITI formed a new project, the Very Large-Scale Integrated (VLSI) circuit, which would coordinate the activities of the four major computer companies in commercializing the DRAM memory chip. 

Dielectric elements that are based on nanostructures are of recent interest for the scaling-down of DRAMs (dynamic random access memories) [11.2]. The need to reduce capacitance requires materials with larger dielectric permittivity. One method to achieve this is to disperse conductive particles in a dielectric matrix by using nanoparticles, the dissipation factor is kept low. 

Abbreviations OE, optoelectronic DRAM, dynamic random access memory I/O, input/output ATM, asynchronous transfer mode VLSI, v y large scale integration ASIC, application-specific integrated circuit. [From Pinkston, T. M., and Kuznia, C. (1997). Smart-Pixel-Based Netwa-k Interface Chip, App/. Optics 36(20), 4871-4880.]... 

Abbrevialions DRAM, Dynamic random-access memory. 

Fig. 1.8 Diagram of a metal-oxide-semiconductor field effect transistor (MOSDEET). It includes a capacitor-fike gate composed of a metallic electrode, a dieleetrie and a semiconductor layer. Voltage switching at the gate generates either no current flow or current flow between the source and drain terminals this corresponds to a sequence of 0 and 1 bits in the binary system. Transistors with MOSFET stmcture are the most commonly used active components of DRAMs (dynamic random access memories) in computers and intelligent cards...

DRAM dynamic random access memory POP package-on-package... 

Other oxides exist that display a large dielectric constant that is orders of magnitude higher than this, such as the ferroelectric BaTiOs or Pb(Zr, Ti)03. Materials with dielectric constant of this order, such as (Ba, Sr)Ti03, are useful as capacitor dielectrics in DRAM (dynamic random access memory) applications. 

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