Double dielectric process

A double metal process can be used to reduce the cell pitch and minimize parasitic resistance and capacitance, which can be critical for 4H-SiC BJTs intended for high-frequency operations. The finished structure in Figure 6.12(e) can be covered with an intermetallic dielectric layer. Via holes are then opened, and a thick metal... 

The origin of the observed correlation was not established, and the relation was not interpreted as causal. It could be argued that a sustained elevated potential due to as-yet unknown microbial processes altered the passive film characteristics, as is known to occur for metals polarized at anodic potentials. If these conditions thickened the oxide film or decreased the dielectric constant to the point where passive film capacitance was on the order of double-layer capacitance (Cji), the series equivalent oxide would have begun to reflect the contribution from the oxide. In this scenario, decreased C would have appeared as a consequence of sustained elevated potential. 

My conclusion (based on double-layer theory) was that, under the usual experimental conditions, the image term is almost entirely screened off. When this is so, the dielectric contribution to the activation free energy is essentially the same for the homogeneous and the heterogeneous process. 

Finally, recently depolarized light scattering spectra [191] display an additional process that shows a much faster characteristic time and a much weaker temperature dependence than the dielectric j0-relaxation (more than three orders of magnitude faster time at -200 K and an activation energy of 0.16 eV, about half of the dielectric value). Also atomistic simulations on PB have indicated hopping processes of the frans-double bond [192,193] with an associated activation energy of -0.15 eV. Whether these observations may be related with the discrepancy in the apparent time scale of the NSE and dielectric experiments remains to be seen. 

Electrochemical impedance measurements of the physical adsorption of ssDNA and dsDNA yields useful information about the kinetics and mobihty of the adsorption process. Physical adsorption of DNA is a simple and inexpensive method of immobilization. The ability to detect differences between ssDNA and dsDNA by impedance could be applicable to DNA biosensor technology. EIS measurements were made of the electrical double layer of a hanging drop mercury electrode for both ssDNA and dsDNA [34]. The impedance profiles were modeled by the Debye equivalent circuit for the adsorption and desorption of both ssDNA and dsDNA. Desorption of denatured ssDNA demonstrated greater dielectric loss than desorption of dsDNA. The greater flexibility of the ssDNA compared to dsDNA was proposed to account for this difference. 

The impedance for the study of materials and electrochemical processes is of major importance. In principle, each property or external parameter that has an influence on the electrical conductivity of an electrochemical system can be studied by measurement of the impedance. The measured data can provide information for a pure phase, such as electrical conductivity, dielectrical constant or mobility of equilibrium concentration of charge carriers. In addition, parameters related to properties of the interface of a system can be studied in this way heterogeneous electron-transfer constants between ion and electron conductors, or capacity of the electrical double layer. In particular, measurement of the impedance is useful in those systems that cannot be studied with DC methods, e.g. because of the presence of a poor conductive surface coating. 

The high frequency limit of for this second process is therefore n. The result of the fit is shown in Table III where the mean values of the various parameters and their associated 95% confidence intervals are given. Considering the small amplitude of the second dispersion both in absolute t rms and in relation to the main dispersion the parameters 6m, n and Y are quite well defined, and therefore it may be concluded that the double Debye representation is an acceptable description of the dielectric behaviour of water up to around 2THz. Other alternative interpretations are clearly possible but no attempt has been made here to follow these up at this stage. What is clear is that a small subsidiary dispersion region in the far infrared is necessary to account for all the presently available permittivity data, and that such a dispersion is centred around 650GHz and has an amplitude of about 2.4 in comparison with that of the principal dispersion which is approximately 75. 

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