Doping diamond films

Highly boron doped diamond film supplied by Naval Research Laboratory, USA. 

The boron-doped diamond film electrode is the newest of the voltammetric indicator electrodes. It is promising because of its high chemical stability, low background currents, and wide potential windows (high overpoten-... 

Deposition of boron-doped diamond films and their anodic treatment for the oxygen-terminated diamond sensor... 

Figure 45 Auger electron spectra (AES) of a hydrogen-terminated boron-doped diamond film supported on a diamond made (see text for details). (From Ref. 67.)...

Fig. 3.8 Typical cyclic voltammogram of boron doped diamond film electrode. The result was tested in 0.5 M H2SO4 solution at 0.1 V s 1 scan rate. The standard hydrogen gas and oxygen gas evolution potentials were marked with E t and Eq2, respectively (after Guo and Chen 2007b)...

Deguchi, M., Kitabatake, M. and Hirao, T. (1996), Electrical properties of boron-doped diamond films prepared by microwave plasma chemical vapour deposition. Thin Solid Films,... 

Fig. 6.2 Raman spectrum of boron-doped diamond film on silicon (a) silicon, (b) boron atoms, (c) diamond (sp3 carbon), and (d) other carbon forms (amorphous)...

Focher R, Wagner J, Fuchs F, Maier M, Gonon P, Koidl P (1995) Optical and electrical characterization of boron-doped diamond films. Diam Relat Mater 4 678-683... 

A further elaboration of the two-step process was done by depositing a B-doped layer on an undoped (100) HOD film [265]. The source gas was a mixture of CH4 and trimethyl borane [B(CH4)3], whose concentrations were 0.5% and 10 ppm, respectively. As a result, a significant lateral growth of B-doped diamond film occurred, which (i) reduced the density of microtwins and (ii) enhanced a step-flow growth. The former result (i) is consistent with those of Refs. [4, 294]. 

Table 13.1 summarizes the experimental results of carrier concentrations and mobilities of various diamond films at room temperature. The electrical conduction of B-doped diamond films (polycrystalline diamond films, HOD films, and homo-epitaxial diamond layers) was also investigated in Ref [417] in the temperature... 

Figure 13.21. CL spectra of heavily B-doped diamond films at (a) 89 K and (b) 300 K.

Boron is an acceptor in diamond with an activation energy of 0.37 eV. Natural type II b diamond is an example of a boron doped p-type diamond. There are many commercial sources of synthetic boron doped-diamond. Polycrystalline boron doped diamond films, made by CVD, have been made for electrode applications. High-pressure high-temperature diamonds with boron doping are also available. ... 

The key factor to all CP-AFM measurements is contact resistance of the conducting probes. Reported conducting probes include heavily doped Si tips and conventional Si or SijN4 tips coated with metal (e.g., Ag, Au, Pt, NbN) or B-doped diamond films. Thomson and Moreland provided a detailed investigation of Ag-, Au-, and Pt-coated tips and doped Si tips and achieved five orders of magnitude lower contact resistance to Au surfaces with metal-coated probes than with doped... 

Highly boron-doped diamond films, which have been widely studied in electrochemistry, can be grown by chemical vapor deposition (CVD) and are electrically conductive. Different electrochemical properties of boron-doped diamond films have been studied, such as reactivity [133] and electronic structure [134]. Different characterization techniques have been used to study the electrochemistry of diamond, such as scanning electron microscopy [123, 135] and Raman spectroscopy [125,136]. 

Liu, F.B., Wang, J.D., Liu, B., Li, X.M., and Chen, D.R. (2007) Effect of electronic structures on electrochemical behaviors of surface-terminated boron-doped diamond film electrodes. Diamond Relat. Mater., 16(3), 454-460. 

Figure 5.15 (a) Boron-doped film with its HPHT substrate before cutting and polishing, (b) Freestanding boron-doped diamond film. (Taken from Ref. [33] with permission.)... 

A cell with a boron-doped diamond film on an n-Si(lll) plate has also been used to generate ozone in the gas phase [29]. A simple undivided, parallel plate cell with sulfuric acid electrolyte was employed. The diamond anode was shown to give more stable performance than Pb02. When operated at 2.3 A cm , it gave a cell off-gas with 0.8% ozone for a period of >3000 h. 

Carter KE, Farrell J (2008) Oxidative destruction of perfluorooctane sulfonate using boron-doped diamond film electrodes. Environ Sci Technol 42(16) 6111-6115 Chen J, Zhang PY et al (2007) Photodegradation of perfluorooctanoic acid by 185 nm vacuum ultraviolet light. J Environ Sci 19(4) 387-390... 

Zhang Y, Asahina S, Yoshihara S, Shirakashi T (2003) Oxygen reduction on Au nanoparticle deposited boron-doped diamond films. Electrochim Acta 48(6) 741-747... 

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