Dopant orientation

Thermal Effects on Dopant Orientation in Poled, Doped Polymers... 

Dopant orientation during and following electric field-induced poling can be studied continuously and in real time in order to examine the microenvironment surrounding the dopants in terms of the polymer relaxations and the applied corona field. In the results presented below, the SHG of 4-dimethylamino-4 -nitrostilbene (DANS) dispersed in polystyrene (PS) or poly(methyl methacrylate) (PMMA) matrices has been examined in corona poled films as a function of temperature in order to understand the effect of thermal conditions on the temporal stability of the dopant orientation. 

Germanium single crystals intended for electronic apphcations are usuaHy specified according to conductivity type, dopant, resistivity, orientation, and maximum dislocation density. They may be specified to be lineage-free unless the specified resistivity is below about 0.05 H-cm. Minority carrier lifetime and majority carrier mobHity are occasionaHy specified. 

The stmcture of the polysihcon depends on the dopants, impurities, deposition temperature, and post-deposition heat annealing. Deposition at less than 575°C produces an amorphous stmcture deposition higher than 625°C results in a polycrystalline, columnar stmcture. Heating after deposition induces crystallization and grain growth. Deposition between 600 and 650°C yields a columnar stmcture having reasonable grain size and (llO)-preferred orientation. 

Theoretical studies of diffusion aim to predict the distribution profile of an exposed substrate given the known process parameters of concentration, temperature, crystal orientation, dopant properties, etc. On an atomic level, diffusion of a dopant in a siUcon crystal is caused by the movement of the introduced element that is allowed by the available vacancies or defects in the crystal. Both host atoms and impurity atoms can enter vacancies. Movement of a host atom from one lattice site to a vacancy is called self-diffusion. The same movement by a dopant is called impurity diffusion. If an atom does not form a covalent bond with siUcon, the atom can occupy in interstitial site and then subsequently displace a lattice-site atom. This latter movement is beheved to be the dominant mechanism for diffusion of the common dopant atoms, P, B, As, and Sb (26). 

Dipolar ions like CN and OH can be incorporated into solids like NaCl and KCl. Several small dopant ions like Cu and Li ions get stabilized in off-centre positions (slightly away from the lattice positions) in host lattices like KCl, giving rise to dipoles. These dipoles, which are present in the field of the crystal potential, are both polarizable and orientable in an external field, hence the name paraelectric impurities. Molecular ions like SJ, SeJ, Nf and O J can also be incorporated into alkali halides. Their optical spectra and relaxation behaviour are of diagnostic value in studying the host lattices. These impurities are characterized by an electric dipole vector and an elastic dipole tensor. The dipole moments and the orientation direction of a variety of paraelectric impurities have been studied in recent years. The reorientation movements may be classical or involve quantum-mechanical tunnelling. 

Oriented material can be described in terms of a paracrystalline structure. On doping with AsFs, order is retained, with a new spacing developing perpendicular to the chain axis and a regular positioning of dopant along the chains 499>. 

The combination of organic dopants with oriented assemblies of organic compounds with high-order nonlinear polarization or organic substances of large third-order susceptibility, x , with inorganic sol-gel matrices, offers a greatly expanded capability for... 

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