Tunneling Fowler-Nordheim

Fig. 8. Band-to-band tunneling in a semiconductor where the triangular barrier leads to Fowler-Nordheim tunneling (33).

Fowler-Nordheim tunneling of, 22 258 in HBTs, 22 167-168 Moore s law and device scaling and, 22 254 in RTDs, 22 170-171 in semiconducting silicon, 22 485-486 in semiconductors, 22 233, 237-239 in SETs, 22 171-172 in single layer OLEDs, 22 215-216 in spinel ferrites, 11 60-61 in the superconducting state, 23 804 Electron spectrometer system, components of, 24 100-101... 

Fig. 24 Schematic representation of electron injection from a metallic electrode into a semiconductor (a) via Schottky emission, (b) via Fowler-Nordheim tunneling, and (c) via hopping in a disordered organic solid.

FIGURE 2.1. Two possible carrier injection mechanisms at the organic/metal electrode interface (a) Schottky-type carrier injection via impurity or structural disordered levels with thermal assistance and (b) Fowler-Nordheim tunneling carrier injection with the assistance of a local high electric field (106—107 V/cm). 

Peyghambarian et al. modeled the dependence of the current flow and the efficiency of devices on various device parameters as the (balance of the) charge carrier mobility and the barrier height at the interfaces for devices, where the current flow is determined by Fowler-Nordheim tunneling (see Fig. 9-24) [83]. In this case, the current flow through the LEDs is injection limited and dominated by Fowler-Nordheim tunneling and the following characteristics are observed [83] ... 

Figure 12-5. Representation of the calculated injection current on a In 7 vs 7 scale. The dashed hne indicates the slopes predicted by Fowler Nordheim tunneling theory for A=0.8eV assuming that the effective mass equals the free electron mass.

Fowler-Nordheim Tunneling in Semiconducting Polymer MIM Diodes... 

Fowler-Nordheim tunneling theory predicts that the tunneling current is an exponential function of 1/F [29]... 

The operating voltage is very sensitive to the barrier height. This sensitivity is predicted by the Fowler-Nordheim tunneling model. Equations (4.3) and (4.4) indicate that for the same tunneling current, the ratio f/>i/2/ V must be the same. Thus,... 

The resistivity and breakdown field of the wet thermal oxide on SiC have been measured to be comparable to those of thermal Si02 on Si, about 1016 Q cm [26,37,40] and as high as 8xl06Vcm [41], respectively. From analysis of Fowler-Nordheim tunnelling currents in the I-V characteristics of 3C-SiC MOS capacitors, the barrier height between thermal oxide and 3C-SiC has been determined as about 3.1 eV [37,40,41],... 

Fowler-Nordheim tunneling-current density, well known as the programming mechanism of a NAND-flash memory-cell, is represented by... 

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