Defect charge carriers

Intrinsic defects (or native or simply defects ) are imperfections in tire crystal itself, such as a vacancy (a missing host atom), a self-interstitial (an extra host atom in an otherwise perfect crystalline environment), an anti-site defect (in an AB compound, tliis means an atom of type A at a B site or vice versa) or any combination of such defects. Extrinsic defects (or impurities) are atoms different from host atoms, trapped in tire crystal. Some impurities are intentionally introduced because tliey provide charge carriers, reduce tlieir lifetime, prevent tire propagation of dislocations or are otlierwise needed or useful, but most impurities and defects are not desired and must be eliminated or at least controlled. 

Shallow donors (or acceptors) add new electrons to tire CB (or new holes to tire VB), resulting in a net increase in tire number of a particular type of charge carrier. The implantation of shallow donors or acceptors is perfonned for tliis purjDose. But tliis process can also occur unintentionally. For example, tire precipitation around 450°C of interstitial oxygen in Si generates a series of shallow double donors called tliennal donors. As-grown GaN crystal are always heavily n type, because of some intrinsic shallow-level defect. The presence and type of new charge carriers can be detected by Flail effect measurements. 

Static defects scatter elastically the charge carriers. Electrons do not loose memory of the phase contained in their wave function and thus propagate through the sample in a coherent way. By contrast, electron-phonon or electron-electron collisions are inelastic and generally destroy the phase coherence. The resulting inelastic mean free path, Li , which is the distance that an electron travels between two inelastic collisions, is generally equal to the phase coherence length, the distance that an electron travels before its initial phase is destroyed ... 

In the presence of weak disorder, one should consider an additional contribution to the resistivity due to weak localisation resulting from quantum interference effects and/or that due to Coulomb interaction effects. A single-carrier weak localisation effect is produced by constructive quantum interference between elastically back-scattered partial-carrier-waves, while disorder attenuates the screening between charge carriers, thus increasing their Coulomb interaction. So, both effects are enhanced in the presence of weak disorder, or, in other words, by defect scattering. This was previously discussed for the case of carbons and graphites [7]. 

In the following section an overview, of several models describing the charge carrier injection and transport of LEDs based on polymers and organic materials, is presented. The focus will be set on mctal/polymer (organic material)/nictal contacts based on a polymer with a low defect concentration will be discussed. A description of LEDs, based on iolymers with a high defect concentration e-m U>... 

The variations of dielectric constant and of the tangent of the dielectric-loss angle with time provide information on the mobility and concentration of charge carriers, the dissociation of defect clusters, the occurrence of phase transitions and the formation of solid solutions. Techniques and the interpretation of results for sodium azide are described by Ellis and Hall [372]. 

One can readily conclude from expression (1.119) - (1.126) that conditions in gaseous phase affect the values of equilibrium concentrations of all point defects and, therefore, the concentration of free charge carriers. 

Lanthanum fluoride (and fluorides of some other lanthanides) has an unusual type of defect (see Section 6.3.2), namely Schottky defects of the molecular hole type (whole LaF3 molecules are missing at certain sites). Charge carriers (F ) are formed as the result of interaction of LaF3 with this hole, leading to dissociation with formation of LaF2+ and F . 

The electronic band structure of a neutral polyacetylene is characterized by an empty band gap, like in other intrinsic semiconductors. Defect sites (solitons, polarons, bipolarons) can be regarded as electronic states within the band gap. The conduction in low-doped poly acetylene is attributed mainly to the transport of solitons within and between chains, as described by the intersoliton-hopping model (IHM) . Polarons and bipolarons are important charge carriers at higher doping levels and with polymers other than polyacetylene. 

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