Dc-magnetron sputtering

Lindgren, T., Mwabora, J.M., Avendano, E., Jonsson, J., Hoel, A., Granqvist, C.G., and Lindquist, S.-E., Photoelectrochemical and optical properties of nitrogen doped titanium dioxide films prepared by reactive DC magnetron sputtering, /. Phys. Chem. B, 107, 5709, 2003. 

K.R. Zhang, F.R. Zhu, C.H.A. Huan, A.T.S. Wee, and T. Osipowicz, Indium-doped zinc oxide films prepared by simultaneous rf and dc magnetron sputtering, Surf. Interface Anal., 28 271-274, 1999. 

Denison and Hartsough (49) also used AES to study the Cu distribution in 2-4% Cu doped A1 films. The Cu is introduced to prevent electromigration in this system when used as an ohmic contact to Si. Their results showed Cu segregation to the film substrate interface for both DC magnetron sputtered and evaporated films. The segregation was partially reversible upon subsequent annealing. 

Fig. 4.15. Binding energy difference between Zn2p3/2 and O Is core levels and between the core levels and the valence band maximum. Films are deposited by dc magnetron sputtering from undoped and 2 % Al-doped ceramic targets at room temperature in dependence of sputter gas composition (left) and in pure Ar in dependence on substrate temperature (right). All films were deposited using a total pressure of 0.5 Pa, a sputter power density of 0.74 W cm-2 and a substrate to target distance of 10 cm...

A determination of the band alignment at the CdS/ZnO interface where ZnO has been stepwise deposited by magnetron sputtering has been published by Venkata Rao et al. [71]. A more extended series of spectra recorded during ZnO deposition by dc magnetron sputtering onto CdS are presented in Fig. 4.19. During ZnO deposition the sample was held at room temperature. 

Fig. 4.38. Energy band diagrams at In2S3/ZnO interfaces as determined from photoelectron spectroscopy. The material used as substrate during interface formation is shown to the left. I112S3 films were deposited by evaporation onto substrates held either at room temperature or at 250°C. ZnO Al films were prepared by dc magnetron sputtering at room temperature in pure Ar or with 10% O2 in the sputter gas as indicated at the top. All values are given in electronvolt. Band bending at the interface is <0.2 eV in all experiments. Because of the uncertainty in the band gap, the conduction band positions of In2S3 are given as dotted lines. Reproduced with permission from [136]...

The transition mode process described here differs fundamentally from conventional reactive sputtering processes for ZnO coatings which do not permit optimization of the film characteristics since they are hysteresis-based. An example of this is the work of Jacobson et al. [96] on reactive DC-Magnetron sputtering of ZnO coatings. 

Fig. 5.23. Deposition system (a) and distribution of resistivity (b) for ZnO Al film deposition by ceramic target (sintered ZnO 2.0wt% AI2O3) DC magnetron sputtering. Ts = 150°C (open triangle), 300°C (open circle), 325°C (open square) and 350°C (bullet) (reprinted from [115])...

Fig. 5.24. Sheet resistance and film thickness distribution for static deposition DC magnetron sputtering of ZnO Al on glass from sintered ZnO A I2O3 targets using a new or an eroded sputtering target (reprinted from [117])...

Kanai, N., T. Nuida, K. Ueta, K. Hashimoto, T. Watanabe and H. Ohsaki (2004). Photocatalytic efficiency of Ti02/Sn02 thin film stacks prepared by DC magnetron sputtering. Vacuum, 74(3 1), 723-727. 

Fig. 18.15 Ti02 films deposited by reactive DC magnetron sputtering (a) Top view and (b) cross-sectional view [reprinted with permission from Weinberger and Garber (1995), Copyright 1995, American Institute of Physics]...

Takeda, S., Suzuki, S., Odaka, H. and Hosono, H. (2001). Photocatalytic Ti02 thin film deposited onto glass by DC magnetron sputtering. Thin Solid Films 392(2), 338-344. 

Zheng, S. K., Wang, T. M., Xiang, G. and Wang, C. (2001). Photocatalytic activity of nanostruc-tured Ti02 thin films prepared by dc magnetron sputtering method. Vacuum 62(4), 361-366. 

In the present work, the influence of reagents stream composition on the structure of ZnO layers has been investigated for dc-magnetron sputtering. Particular attention has been dedicated to the study of processes of reagent interactions in the gas phase. And, for a deeper understanding of this process, the process of formation of clusters in the gas phase of the simple Zn-02 system was investigated. 

At first we have investigated the stmcture of ZnO layers grown by dc-magnetron sputtering of ZnO Ga ceramic target, as a function of the distance between the target and the substrate. 

Minami T., Sonohara H., Kakumu T. and Takata S., Physics of very thin ITO conducting films with high transparency prepared by DC magnetron sputtering. Thin Solid Films, 270 (1995) pp. 37-42. 

Bender M., Seelig W., Daube C., Ocker B. and Stollenwerk J., Dependence of oxygen flow on optical and electrical properties of DC magnetron sputtered ITO films. Thin Solid Films 326 (1998) pp.72-77. 

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