Current device structures

The current-voltage and luminance-voltage characteristics of a state of the art polymer LED [3] are shown in Figure 11-2. The luminance of this device is roughly 650 cd/m2 at 4 V and the luminous efficiency can reach 2 lm/W. This luminance is more than adequate for display purposes. For comparison, the luminance of the white display on a color cathode ray tube is about 500 cd/m2l5J. The luminous efficiency, 2 lm/W, is comparable to other emissive electronic display technologies [5], The device structure of this state of the art LED is similar to the first device although a modified polymer and different metallic contacts are used to improve the efficiency and stability of the diode. Reference [2] provides a review of the history of the development of polymer LEDs. 

The paper is oiganized to describe, first, the materials that have been used in OLEDs, then the device structures that have been evaluated. After a description of the methods used to characterize and evaluate materials and devices, we summarize the current stale of understanding of the physics of device operation, followed by a discussion of the mechanisms which lead to degradation and failure. Finally, we present the issues that must be addressed to develop a viable flat-panel display technology using OLEDs. Space and schedule prevent a comprehensive review of the vast literature in this rapidly moving field. We have tried to present... 

Spiro-FPAl/TPBI/Bphen Cs/Al. A very low operating voltage of 3.4 V at luminance of 1000 cd/m2 was obtained, which is the lowest value reported for either small-molecule or polymer blue electroluminescent devices. Pure blue color with CIE coordinates (0.14, 0.14) have been measured with very high current (4.5 cd/A) and quantum efficiencies (3.0% at 100 cd/m2 at 3.15 V) [245]. In another paper, Spiro-FPA2 (126) was used as a host material with an OLED device structure of ITO/CuPc/NPD/spiro-FPA2 l%TBP/Alq3/LiF that produces a high luminescent efficiency of 4.9 cd/A [246]. 

CURRENT BEST PERFORMANCE OF THE THREE PRIMARY COLOR MATERIALS AND DEVICE STRUCTURES... 

Each of the techniques described above has unique strengths and weaknesses, and the optimum device structure for commercial full-color displays will also be heavily influenced by the ease with which it can be mass-produced. Currently full-color OLED displays have been manufactured commercially by using two of the above described techniques only, i.e., (a) side-by-side pixels deposited by high-precision shadow masking and (b) using white OLEDs and color absorption filters. 

For the development of SEU-hardened memory devices, it is expedient to reduce charge collected in a memory cell. For this purpose, the formation of buried oxide in device structures, i.e., the fabrication of SOI structure, is considered a useful method because such a buried oxide layer can be expected to suppress the charge collection due to the drift and funneling processes. However, no experimental approach had been made for the charge collection in SOI devices. To investigate the charge collection in the SOI structure, transient currents induced in SOI pn junctions by heavy ions such as 15-MeV carbon (C) or oxygen (O) ions have been measured. 

Other indirect methods for measuring lifetimes often involve device structures such as p-n junctions. The electron-beam-induced current (EBIC) technique, for example, measures the increase injunction current as an impinging electron beam moves close to the junction, i.e., within a few minority-carrier diffusion lengths. If a diffusion constant can be estimated, say by knowledge of the minority-carrier mobility, then the minority-carrier lifetime can be calculated. However, SI GaAs does not form good junctions, so such methods are really not applicable. 

There are two possible approaches towards making feasible devices. One approach is to develop device structures that need smaller coefficients to operate, e.g lossy Fabry-Perot cavities (8), the other approach is to trade-off some of the speed and low loss in current organics for larger responses, for instance by tuning into resonances. In this paper we will explore the latter route and show how this can be achieved in some materials whilst maintaining, at acceptable levels, the critical figures of merit relating the nonlinear refraction to linear loss and two photon absorption to nonlinear refraction. 

In one recent study, Mn2+-doped CdS nanocrystals grown with a ZnS passivating shell were used as the recombination centers in direct current (dc) electroluminescent devices (104). The Mn2+ CdS/ZnS nanocrystals were prepared by the inverse micelle procedure (102) (see Section II.C) and these colloids were incorporated into a multilayer device structure by spin-coat... 

FIGURE 4 (a) Threshold current as a function of active region diameter, (b) Device structure assumed for (a). 

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