Current-bias potential curves

Figure 6 shows the current-bias potential curves for Ti02 film... 

Fig. 6.7. Potentiodynamic current-potential curves of oxidation of Bi particles obtained by 1 -vacuum deposition of Bi onto BiOCl 2 - photolysis of BiOCl under applied bias 3 -photolysis of BiOCl without applied bias 4 - photolysis of BiOBr under applied bias 5 -photolysis of BiOBr without applied bias 6 - vacuum deposition of Bi onto Pt support...

Zviagin and Liutovich (11) found similar minimum values for p-type Si as we did for the Ge samples. The theoretical curve of the Russian authors is calculated on the assumption that the minority carriers are depleted. This is possible for a p-type semiconductor only in the case of cathodic polarization. Since the Russian authors did not take into account the possibility of enrichment of the minority carriers, they did not get a distinct minimum of the theoretical capacity-potential curve. We found the minimum for n-type Ge under reverse bias, i. e., under anodic current. This result is to be expected (in contrast to a common rectifier) as long as the resistance across the phase boundary (R ) is high compared to the recombination rate or the rate orformation of free carriers. It is to be expected, in other words, as long as the electrochemical potential of the free carriers remains nearly constant across the space charge up to the surface. The Russian authors point out that the measured capacity is not equal to the space charge capacity, but should be related to it. This relationship is indicated by the measured frequency dependence of the measured impedances. It is in agreement with our assumption that the... 

If the bias potential and I Ip I, and therefore Cd/ are kept constant, then changes in Cm can be calculated from I once Cd is determined. In practice, calibrated capacitors (to model Cm) can be inserted into the circuit prior to formation of the membrane. Calibration curves of the modelled Cm vs. I and vs. ( >,where ( > is the phase angle between I and the LED current (light intensity), can then be used to determine Cm once the membrane is formed. 

Figure 8.5 Current-potential curve for p-silicon in concentrated HF solutions under anodic bias (after [8]).

Because there is no depletion layer between the substrate and the conducting channel, the equations of the current-voltage curves are in fact simpler in the TFT than in the MISFET, provided the mobility can still be assumed constant (which is not actually the case in most devices, as will be seen below). Under such circumstances, the charge induced in the channel is given, in the case of an /l-channel, by Eq. (14.23). In the accumulation regime, the surface potential Vs(x) is the sum of two contributions (i) the ohmic drop in the accumulation layer, and (ii) a term V(x) that accounts for the drain bias. The first term can be estimated from Eqs. (14.15), (14.16) and (14.19). In the accumulation regime, and provided Vx>kT/q, the exponential term prevails in Eq. (14.16), so that Eq. (14.15) reduces to... 

The characteristic shape of the anodic voltammogram of a Si electrode in aqueous fluoride media, as shown for example in Fig. 3. Id, is surprisingly stable against changes in fluoride concentration (cF) or pH. When the potential of a p-type Si electrode is swept anodic of OCP a steep current rise near 0 V is observed, followed by a sharp peak (Jj) and a narrow plateau (J2). Then a second broad maximum (Ji) is found around a positive bias of 1.5-2.5 V, followed by a broad plateau (J4) extending over several volts, as shown in Fig. 4.7. When electrode rotation is used, these curves are pen-reproducible for a given solution. The hysteresis of the curves approaches zero for slow sweeps [Ch3]. 

Typical anodization curves of silicon electrodes in aqueous electrolytes are shown in Fig. 5.1 [Pa9]. The oxidation can be performed under potential control or under current control. For the potentiostatic case the current density in the first few seconds of anodization is only limited by the electrolyte conductivity [Ba2]. In this respect the oxide formation in this time interval is not truly under potentiostatic control, which may cause irreproducible results [Ba7]. In aqueous electrolytes of low resistivity the potentiostatic characteristic shows a sharp current peak when the potential is switched to a positive value at t=0. After this first current peak a second broader one is observed for potentials of 16 V and higher, as shown in Fig. 5.1a. The first sharp peak due to anodic oxidation is also observed in low concentrated HF, as shown in Fig. 4.14. In order to avoid the initial current peak, the oxidation can be performed under potentiodynamic conditions (V/f =const), as shown in Fig. 5.1b. In this case the current increases slowly near t=0, but shows a pronounced first maximum at a constant bias of about 19 V, independently of scan rate. The charge consumed between t=0 and this first maximum is in the order of 0.2 mAs cnT2. After this first maximum several other maxima at different bias are observed. 

The formation of pores during anodization of an initially flat silicon electrode in HF affects the I-V characteristics. While this effect is small for p-type and highly doped n-type samples, it becomes dramatic for moderate and low doped n-type substrates anodized in the dark. In the latter case a reproducible I-V curve in the common sense does not exist. If, for example, a constant potential is applied to the electrode the current density usually increases monotonically with anodization time (Thl, Th2]. Therefore the I-V characteristic, as shown in Fig. 8.9, is sensitive to scan speed. The reverse is true for application of a certain current density. In this case the potential jumps to values close to the breakdown bias for the flat electrode and decreases to much lower values for prolonged anodization. These transient effects are caused by formation of pores in the initially flat surface. The lowering of the breakdown bias at the pore tips leads to local breakdown either by tunneling or by avalanche multiplication. The prior case will be discussed in this section while the next section focuses on the latter. 

Photocurrent voltage curves have been studied with molybdenum selenide crystals of different orientation and different pretreatment. Figure 5 represents results for three typical surfaces of n-type MoSe (JJ+). An electrode with a very smooth surface cleaved parallel to the van der Waals-plane shows a very low dark current in contact with the KI containing electrolyte since iodide cannot directly inject electrons into the conduction band and can only be oxidized by holes. At a bias positive from the flat band potential U where a depletion layer is formed a photocurrent can be observed as shown in this Figure. This photocurrent reaches a saturation at a potential about 300 mV more positive than when surface recombination becomes negligible. 

PS can either be formed by anodization in HF-containing solution under an anodic bias or by an electroless process. The formation condition can best be characterized by i-V curves. Figure 5.3 shows a typical plot of an i-V curve of silicon in HF solutions. At small anodic overpotentials the current increases exponentially with the electrode potential. As the potential is increased, the current exhibits a peak and then remains at... 

If there is a strong coupling between the metal and the semiconductor, Epp is close to Ep in the metal at all potentials. For a reverse bias (negative U), there is an extraction of holes and Epp occurs above Epn as shown in Fig. 2.8b. The resulting current-voltage curve can be derived as follows. 

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