Cross-sectional transmission electron

Thin epitaxial films (less than 3 nm) of CrAs and CrSb with zinc-blende structure can be grown on GaAs substrates by MBE. Their 7c exceeds 400 K (Akinaga et al. 2000c Zhao et al. 2001b). A zinc-blende structure is confirmed by in-situ RHEED collected during the growth and ex-situ cross-sectional transmission electron microscopy (TEM). The... 

M. Natan, S.W. Duncan. Microstructure and growth kinetics of CrSi2 on Si 100 studied using cross-sectional transmission electron microscopy // Thin Solid Films. -1985.-V.123, No.l.-P.69-85. 

FIGURE 1 Cross-sectional transmission electron micrographs (TEM) of laterally overgrown GaN layer on a SiC>2 mask and window area. 

XTEM Cross-sectional transmission electron microscopy... 

Figure 8. Cross-section transmission electron microscopy image of a nanocrystalline Ti02 anatase film. The nominal crystallite size is 16 nm.

Scanning electron microscopy and cross-sectional transmission electron... 

Figure 9.9 Cross-sectional transmission electron microscopy images of two Au/DIP/silicon oxide hetero-structures. While the An contact prepared at (a) -120 °C and a rate of 23 A/min exhibits rather weU-defined interfaces, the An contact prepared at (b) 70 °C and a rate of 0.35 A/min shows strong interdiffusion. Note that individual lattice planes of the DIP film can be resolved. Figures by courtesy of A. Durr and from Ref. [86] with permission.

We prepared aluminium oxide films by radio frequency (r.f) magnetron sputtering fi om an aluminium oxide target in a dedicated vacuum chamber. To study the growth and structure of these films deposited on silicon oxide and films of DIP we used X-ray reflectivity, cross-sectional transmission electron microscopy (TEM) and atomic force microscopy (AFM) in contact mode. For further details on the preparation of the aluminium oxide films we refer to Refs. [112, 113]. 

Figure 8.4 Cross-sectional transmission electron micrograph showing dramatic reduction in dislocation density through recombination at the initial stage of GaN growth...

Figure 8.9 Cross-sectional transmission electron micrograph of GaN grown on a columnar SiC substrate. The SiC surface was annealed in hydrogen at 1200 °C for 10 min. A thin GaN buffer layer was grown first at 850 °C, followed by a thick GaN overlayer at 1030 °C. Surface contaminants not removed by hydrogen etching were found to produce small voids (v) in the buffer layer...

Figure 8.12 Cross-sectional transmission electron micrograph of GaN grown on a TiN interlayer. Voids (V) and Ga droplets are observed above as well as beneath the TiN interlayer. Most dislocations in the template are either consolidated at the voids or blocked by the interlayer. Stacking faults (SF) observed in the GaN overgrown layer are likely induced by void-related thermal stress, since no stacking faults or voids are observed in GaN growths on a SiN interlayer...

Fig. 9. Cross sectional transmission electron micrograph of a 3C/6H/3C/6H-SiC(0001) heterostructure grown at 1500 K. (Courtesy of A. Fissel, University of Jena, Germany)...

PMDA-ODA) polyimide when the metal was deposited at elevated temperatures and low deposition rates. The formation of Cu and Ag clusters in the bulk of polyimides has also been shown by means of cross-sectional transmission electron microscopy (see below). 

Johansson, S. and Schweitz, J., 1988, Contact damage in single-crystalline silicon investigated by cross-sectional transmission electron microscopy, /. Am. Ceram. Soc., Vol. 71, pp. 617-623. 

Cross-section transmission electron microscopy (XTEM) images of the samples give views of the layers with an excellent resolution. Figure 8 shows the image of the 14-period W/Si multilayer, whose in-situ reflectivity was shown in Fig. 3. A detail of the first layers is given in Fig. 9. 

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