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Cold Electronics

G. Walker Miniature Refrigerators for Cryogenic Sensors and Cold Electronics Clarendon Press, Oxford (1989)... [Pg.156]

CUORICINO has 24 cold electronics acquisition channels and 38 channels with room temperature amplifiers. The formers are realized by JFET pairs working in the cryostat at 120K [104], The differential configuration and their position close to the detectors (between 1.5 K and 600 mK stages) have minimized interferences and microphonic noise from the detector wires. [Pg.367]

In many electronic applications, e.g. vacuum tubes, an electron emitting cathode is an indispensable part of the device. For many such devices cold electron emission is favorable because of its lower energy consumption. [Pg.232]

In Table 1 is shown the cold electron emission current calculated by Bethe and Zommerfeld [32] with allowance for the image potential. One can see that in fields of several million volts per centimeter the electron current initially jumps but then swiftly reaches very high values. Experimentally, a... [Pg.30]

The cold electron emission current (A cm 2) in strong electric fields (V cm ) [32] 1 is the work function... [Pg.31]

In spite of that the majority of gap manifestations appears in the hot spectrum, the cold electrons act essentially in building up superconductivity. Beyond Cp the cold subband acts as the necessary overlapping partner to achieve a high Tc by the interband mechanism. The presence of pseudogaps in the present model is reduced to the creation of a multicomponent electron liquid by doping. [Pg.59]

The practical implication is the fact that in the CP MD simulation the molecular system does not evolve right on the Born-Oppenheimer PES, but stays close to it. A measure of deviations from the BO PES is the fictitious kinetic energy (wave-function temperature). Figure 4-2 demonstrates that this deviation is minor, as the electronic (fictitious) temperature is relatively low. The wave function stays cold (compared to the hot nuclei) in the MD terminology the term cold electrons is often used in this context. [Pg.229]

When the applied biases exceed the tunneling barrier height Ob, then cold-electron emission through a trapezoidal barrier can also occur from the electrode with greater surface roughness (e.g., the top electrode). This "field" emission is described by the Fowler30 -Nordheim3 [18] equation ... [Pg.454]

A side reaction may be metallation of hydrogens in positions ortho or a to the halogen. The fast rates of halogen-Li exchanges, especially in cold electron-donating solvents, enable low T to be used and the extent of the slower metallations to be minimized. The presence of tetramethylethylenediamine (TMED) however, can promote metallations more than metal-hydrogen exchanges . [Pg.137]

The explanation, which was given independently by Gamow and by Condon and Gurney (1928), depends on a deep-seated distinction between quantum mechanics and ordinary mechanics, which is of importance in other cases also (as in cold electron emission, p. 222). In order to get a mechanical picture of the binding of an a-particle to the rest of the nucleus, we must imagine a field of force which holds... [Pg.182]

As described below, cold electrons can be emitted from NEA surfaces while classical surfaces require hot electrons for emission over a finite energy barrier which exists at the surface. Transport in NEA structures can also be optimized by materials selection, while little can be done to control transport in classical emitters. [Pg.157]

NEA surfaces differ from classical photoemissive surfaces in that conduction band electrons require no excess thermal energy above to escape. It is a cold electron emission device, while in classical positive electron affinity surfaces a small barrier is present at the surface and either hot electron escape or tunneling of thermalized electrons is required for emission. NEA and classical electron emission are contrasted in Fig. 5.8 [5.67]. Part (a) is a classical emitter, (b) is a p-type semiconductor treated to obtain NEA, and (c) is an n-type semiconductor similarly treated but without attaining NEA. (Many details of this figure are clarified in later sections.)... [Pg.165]


See other pages where Cold Electronics is mentioned: [Pg.329]    [Pg.461]    [Pg.12]    [Pg.314]    [Pg.314]    [Pg.318]    [Pg.320]    [Pg.138]    [Pg.394]    [Pg.329]    [Pg.267]    [Pg.232]    [Pg.337]    [Pg.358]    [Pg.299]    [Pg.299]    [Pg.303]    [Pg.305]    [Pg.376]    [Pg.219]    [Pg.241]    [Pg.57]    [Pg.34]    [Pg.191]    [Pg.180]    [Pg.185]    [Pg.215]    [Pg.87]    [Pg.176]    [Pg.534]    [Pg.157]    [Pg.164]    [Pg.166]    [Pg.169]   
See also in sourсe #XX -- [ Pg.238 , Pg.303 ]

See also in sourсe #XX -- [ Pg.238 , Pg.303 ]

See also in sourсe #XX -- [ Pg.93 ]




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