Chemical organic laser materials

Much of the energy deposited in a sample by a laser pulse or beam ablates as neutral material and not ions. Ordinarily, the neutral substances are simply pumped away, and the ions are analyzed by the mass spectrometer. To increase the number of ions formed, there is often a second ion source to produce ions from the neutral materials, thereby enhancing the total ion yield. This secondary or additional mode of ionization can be effected by electrons (electron ionization, El), reagent gases (chemical ionization. Cl), a plasma torch, or even a second laser pulse. The additional ionization is often organized as a pulse (electrons, reagent gas, or laser) that follows very shortly after the... 

Hiroshi Fukumura received his M.Sc and Ph.D. degrees from Tohoku University, Japan. He studied biocompatibility of polymers in the Government Industrial Research Institute of Osaka from 1983 to 1988. He became an assistant professor at Kyoto Institute of Technology in 1988, and then moved to the Department of Applied Physics, Osaka University in 1991, where he worked on the mechanism of laser ablation and laser molecular implantation. Since 1998, he is a professor in the Department of Chemistry at Tohoku University. He received the Award of the Japanese Photochemistry Association in 2000, and the Award for Creative Work from The Chemical Society Japan in 2005. His main research interest is the physical chemistry of organic molecules including polymeric materials studied with various kinds of time-resolved techniques and scanning probe microscopes. 

GaN as a semi-conducting material for electronics is about to be launched on the market, especially for the use in blue- and UV-emitting LEDs and laser diodes [2]. The material is deposited on crystalline substrates like sapphire using thin-film epitactical techniques. Often, metal-organic chemical vapor deposition (MOCVD) is used. The necessity for such technologies limits the production rate and pushes up costs. 

Ullrafine particles (UFPs) of metal and semiconductor nitrides have been synthesized by two major techniques one is the reactive gas condensation method, and the other is the chemical vapor condensation method. The former is modified from the so-called gas condensation method (or gas-evaporation method) (13), and a surrounding gas such as N2 or NII2 is used in the evaporation chamber instead of inert gases. Plasma generation has been widely adopted in order to enhance the nitridation in the particle formation process. The latter is based on the decomposition and the subsequent chemical reaction of metal chloride, carbonate, hydride, and organics used as raw materials in an appropriate reactive gas under an energetic environment formed mainly by thermal healing, radiofrequency (RF) plasma, and laser beam. Synthesis techniques are listed for every heal source for the reactive gas condensation method and for the chemical vapor condensation method in Tables 8.1.1 and 8.1.2, respectively. 

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