Laser molecular implantation

Hiroshi Fukumura received his M.Sc and Ph.D. degrees from Tohoku University, Japan. He studied biocompatibility of polymers in the Government Industrial Research Institute of Osaka from 1983 to 1988. He became an assistant professor at Kyoto Institute of Technology in 1988, and then moved to the Department of Applied Physics, Osaka University in 1991, where he worked on the mechanism of laser ablation and laser molecular implantation. Since 1998, he is a professor in the Department of Chemistry at Tohoku University. He received the Award of the Japanese Photochemistry Association in 2000, and the Award for Creative Work from The Chemical Society Japan in 2005. His main research interest is the physical chemistry of organic molecules including polymeric materials studied with various kinds of time-resolved techniques and scanning probe microscopes. 

MBE growth of very thin layer of boron and silicon. The problems associated with boron implant and laser anneal can be overcome by growing a very thin (5 nm) layer of silicon with boron atoms on the backside of the thinned CCD (1% boron, 99% silicon). The growth is applied by molecular beam epitaxy (MBE) machines. This process was developed by JPL and MIT/LL. 

Nanocrystallization via dewetting of materials has been observed in processing techniques, including ion implantation followed by thermal annealing, laser ablation, high-vacuum deposition, and molecular beam epitaxy In this section we focus on... 

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