Charge storage applications

Y. Gofer, J. G. Kilham, H. Sarkeer, T. O. Poehler and P. C. Searson, The electrochemistry of Unorine-substituted polyphenylthiophenes for charge storage applications, J. Electroanal. Chem., 443, 103—115 (1998). 

Stolar M, Baumgartner T (2013) Organic n-type materials for charge transport and charge storage applications. PCCP 15(23) 9007-9024... 

The knowledge that conducting polymers can be charged, i.e. oxidized and reduced, raised early on the question of possible applications, such as the construction of a polymer battery. But basic research was long unable to explain the charge storage mechanism. 

This problem has attracted considerable attention, and intriguing results have been obtained. It would be important, however, to develop some applications in organic photodiodes, transistors, sensors, and charge-storage devices. 

A particular advantage of interfacial charge-separated states at semiconductor materials is that the injected electrons can be collected as an electrical response. This forms the basis for new applications that exploit both electronic and optical properties of the sensitized materials such as charge storage, displays, and optical switching. 

Intercalation of cations into a framework of titanium dioxide is a process of wide interest. This is due to the electrochromic properties associated with the process (a clear blue coloration results from the intercalation) and to the system s charge storage capabilities (facilitated by the reversibility of the process) and thus the potential application in rocking-chair batteries. We have studied alkali-metal intercalation and ion diffusion in the Ti02 anatase and spinel crystals by theoretical methods ranging from condensed-phase ab initio to semiempirical computations [65, 66]. Structure relaxation, electron-density distribution, electron transfer, diffusion paths and activation energies of the ion intercalation process were modeled. 

Lu, X.B., and J.Y. Dai. Memory Effects of Carbon Nanotubes as Charge Storage Nodes for Floating Gate Memory Applications. Applied Physics Letters 88 (2006) 113104. 

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