Charge quantum efficiency

Some of these devices have a respectable quantum efficiency of charge generation and collection, approaching 0.4 (20). The nature of the polymeric binder has a large effect on the device performance (21), and so does the quaUty and source of the dye (22). Sensitivity to the environment and fabrication methods results in some irreproducibiUties and batch-to-batch variances. However, the main advantage of the ZnO-based photoreceptor paper is its very low cost. 

For a simplified case, one can obtain the rate of CL emission, =ft GI /e, where /is a function containing correction parameters of the CL detection system and that takes into account the fact that not all photons generated in the material are emitted due to optical absorption and internal reflection losses q is the radiative recombination efficiency (or internal quantum efficiency) /(, is the electron-beam current and is the electronic charge. This equation indicates that the rate of CL emission is proportional to q, and from the definition of the latter we conclude that in the observed CL intensity one cannot distii pish between radiative and nonradiative processes in a quantitative manner. One should also note that q depends on various factors, such as temperature, the presence of defects, and the... 

The hole current in this LED is space charge limited and the electron current is contact limited. There are many more holes than electrons in the device and all of the injected electrons recombine in the device. The measured external quantum efficiency of the device is about 0.5% al a current density of 0.1 A/cm. The recombination current calculated from the device model is in reasonable agreement with the observed quantum efficiency. The quantum efficiency of this device is limited by the asymmetric charge injection. Most of the injected holes traverse the structure without recombining because there are few electrons available to form excilons. 

In electroluminescence devices (LEDs) ionized traps form space charges, which govern the charge carrier injection from metal electrodes into the active material [21]. The same states that trap charge carriers may also act as a recombination center for the non-radiative decay of excitons. Therefore, the luminescence efficiency as well as charge earner transport in LEDs are influenced by traps. Both factors determine the quantum efficiency of LEDs. 

The processes of charge injection, transport, and recombination dictate the recombination efficiency h(/), which is the fraction of injected electrons that recombine to give an exciton. The recombination efficiency, which is a function of the device current, plays a primaty role in determining the amount of emitted light, therefore determining the OLED figurcs-of-meril. For example, the quantum efficiency /y(/) (fraction of injected electrons that results in the emission of a photon from the device) is, to a first approximation, given by ... 

Interesting results have also been obtained with light-induced oscillations of silicon in contact with ammonium fluoride solutions. The quantum efficiency was found to oscillate complementarity with the PMC signal. The calculated surface recombination rate also oscillated comple-mentarily with the charge transfer rate.27,28 The explanation was a periodically oscillating silicon oxide surface layer. Because of a periodically changing space charge layer, the situation turned out to be nevertheless relatively complicated. 

The use of interpenetrating donor-acceptor heterojunctions, such as PPVs/C60 composites, polymer/CdS composites, and interpenetrating polymer networks, substantially improves photoconductivity, and thus the quantum efficiency, of polymer-based photo-voltaics. In these devices, an exciton is photogenerated in the active material, diffuses toward the donor-acceptor interface, and dissociates via charge transfer across the interface. The internal electric field set up by the difference between the electrode energy levels, along with the donor-acceptor morphology, controls the quantum efficiency of the PV cell (Fig. 51). 

In addition to the photoluminescence red shifts, broadening of photoluminescence spectra and decrease in the photoluminescence quantum efficiency are reported with increasing temperature. The spectral broadening is due to scattering by coupling of excitons with acoustic and LO phonons [22]. The decrease in the photoluminescence quantum efficiency is due to non-radiative relaxation from the thermally activated state. The Stark effect also produces photoluminescence spectral shifts in CdSe quantum dots [23]. Large red shifts up to 75 meV are reported in the photoluminescence spectra of CdSe quantum dots under an applied electric field of 350 kVcm . Here, the applied electric field decreases or cancels a component in the excited state dipole that is parallel to the applied field the excited state dipole is contributed by the charge carriers present on the surface of the quantum dots. 

The quantum yield for the formation of 8-oxodGuo 44 from guanine in relation to the formation of products arising from the oxidation of other nucle-obases may be considered as a marker of charge transfer efficiency. This parameter was therefore used to study the influence of duplex stability on... 

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