Bulk growth substrates

Irrespective of deposition potential, intercalation of deposited metal at SAM/substrate interface and bulk growth are labelled as UPD and OPD, respectively. 

Figure 8.11 shows the cyclic voltammogram of the upper phase of the biphasic mixture of A1C13 /1 -bu tyl -1 -methylpyrrolidinium bis(trifluoromethylsulfonyl)imide on a gold substrate at room temperature. At a potential of —0.7 V (vs. Al), the cathodic current rises with two small cathodic steps at —0.9 and —1.3 V which are correlated to two different redox processes before the bulk growth of Al sets... 

Bulk growth of GaN and AIN has been achieved by a sublimation method and a sublimation sandwich method. Bulk GaN and AIN bulk crystals were proved to have high crystallinity. It will improve the quality of nitride-based optoelectronic devices, if these bulk crystals are used as substrates for homoepitaxial growth. The size of the bulk GaN, however, is not large enough at this moment, and enlargement of bulk GaN may be necessary. 

Recently, Mg and Be compounds have been used in alloys with ZnSe to make blue and green semiconductor lasers. Bulk growth by zone melting and molecular beam epitaxy (MBE) ° has been used. In these cases, good semiconductor material has been obtained dilution with group IIB compounds may be responsible. However, growth of pure MgS in very thin films on ZnSe has been achieved the epitaxial orientation effect of the substrate results in a tetrahedral cubic (sphalerite or zinc-blende) structure. It is likely that improvements in these materials will take place at a rapid rate, driven in part by applications and in part by newer, cleaner synthetic methods. 

Most of the reports described above involve 6H-SiC bulk growth on 6H-SiC seed substrates. Yoo et al [46] used 3C-SiC(100) as the substrate for 6H-SiC bulk growth and found 6H-SiC(0114) bulk material was produced. They reported crystals with diameters of 15 mm and 6 mm long. By using different planes of 6H-SiC, polytype control will be easily achieved. 

While considerable progress was made in thin-fihn growth of nonpolar GaN from 2000-2002, thick-film or bulk growth of nonpolar orientations continued to be elusive until late 2002. The performance of nonpolar GaN-based devices would be limited by the lack of low-defect density film and substrate options. This chapter describes the progress achieved in thick-film nonpolar GaN growth via hydride vapor phase epitaxy (HVPE) toward the goal of producing low-defect density nonpolar GaN thick-films and substrates. 

Bulk SiC substrates made by the Acheson method or the Lely method have been used as the substrates for growth of a-SiC. Recently, SiC wafers sliced from an SiC ingot grown by the modified Lely method have been used. Usually, ((X)01) Si or ((X)01) C surfaces are used. Here, homoepitaxial growth of SiC by CVD using an SiH4-C3Hg-H2 reaction gas system is illustrated... 

High-quality homoepitaxial ZnO layers were grown on bulk ZnO substrates by using N2O and DEZn [151]. Two conditions, proper thermal treatment of substrate prior to the growth for obtaining flat surface and high flow rate ratios of source materials, were found to be important to obtain high-quality layers. Surface... 

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