Bulk growth single crystal

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

Ohshima, E., Ogino, H., Niikura, 1., Maeda, K., Sato, M., Ito, M. and Fukuda, X. (2004) Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method. Journal of Crystal Growth, 260, 166. 

An example of an analysis done on polysilicon and single-crystal Czochralski silicon (CZ) is shown in Table 1. As can be seen, polysilicon, which was used to grow the crystal, is dirtier than the CZ silicon. This is expected, since segregation coefficients limit the incorporation of each element into the crystal boule during the crystal growth process. All values shown in the table are from bulk analysis. Table 2 shows NAA data obtained in an experiment where surface analysis was accom-... 

In addition to induction time measurements, several other methods have been proposed for determination of bulk crystallization kinetics since they are often considered appropriate for design purposes, either growth and nucleation separately or simultaneously, from both batch and continuous crystallization. Additionally, Mullin (2001) also describes methods for single crystal growth rate determination. 

Standard techniques for the growth of bulk single crystals are ... 

Overview of Unit Operations. To maximize the electron or hole (carrier) mobility and thus device speed, ICs are built in single-crystal substrates. Methods of bulk crystal growth are therefore needed. The most common of these methods are the Czochralski and float-zone techniques. The Czochralski technique is a crystal-pulling or melt-growth method, whereas the float-zone technique involves localized melting of a sintered bar of the material, followed by cooling and, thus, crystallization. 

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