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Boron-doped diamond substrate

Electrodeposition on boron-doped diamond has pointed to progressive growth mechanism, as confirmed by chronoam-perometric transients and ex situ AFM images [ 312]. At lower concentrations, lead ions are deposited directly on the diamond substrate, while at higher concentrations, deposits overlap and further deposition occurs on lead. At higher temperatures, the size of the nuclei is bigger. [Pg.822]

Concerning the substrate, practically any material can be used to form a modified electrode, although the most used are gold, silver, platinum, mercury, and carbon (in its different variants, like glassy carbon, Highly Oriented Pyrolitic Graphite (HOPG), or Boron-Doped Diamond (BDD) electrodes [39]). [Pg.415]

Abstract Boron-doped diamond (BDD) electrodes provide an unusually wide electrochemical window in protic media, since there exist large offset potentials for the evolution of molecular hydrogen and oxygen, respectively. At the anode, alcohols are specifically converted to alkoxyl radicals. These can be used for chemical synthesis. When the enormous reactivity of such intermediate spin centers is not controlled, mineralization or electrochemical incineration dominates. Efficient strategies include either high substrate concentrations or fluorinated alcohols which seem to stabilize the spin centers in the course of reaction. [Pg.2]

This section summarizes some of the most significant electrochemical results obtained to date for selected electrodes cleaned and characterized under UHV in PEO-lithium-based solutions, and include nonalloy (Ni)- and alloy-forming metals (Ag and Al), a noninteracting substrate (boron-doped diamond, BDD) and a material capable of intercalating Li+ (graphite). It is expected that the information herein contained will serve to illustrate the power of this methodology for the study of highly reactive interfaces. [Pg.266]

Boron-doped diamond (BDD) thin films were synthesized at CSEM (Neuchatel, Switzerland) by the hot filament chemical vapor deposition technique (HF CVD) on p-type, low-resistivity (l-3mQcm), single-crystal, silicon wafers (Siltronix). The temperature of the filament was between 2440 and 2560 °C and that of the substrate was monitored at 830 °C. The reactive gas was a mixture of 1% methane in hydrogen, containing trimethylboron as a boron source (1-3 ppm, with respect to H2). The reaction chamber was supplied with the gas mixture at a flow rate of 51 min giving a growth rate of 0.24 pm h for the diamond layer. The obtained diamond film has a thickness of about 1 pm ( 10%) and a resistivity of 15mQcm ( 30%). This HF CVD process produces columnar, random textured, polycrystalline films [9]. [Pg.892]

Figure 5.15 (a) Boron-doped film with its HPHT substrate before cutting and polishing, (b) Freestanding boron-doped diamond film. (Taken from Ref. [33] with permission.)... [Pg.194]

Doped diamond is the alternative carbon material to glassy carbon for ozone generation [20,21], but the technology is much less developed. Boron-doped diamond is prepared by chemical vapor deposition and has been used as an anode when (i) deposited as a thin film on substrates such as silicon, titanium, or niobium or (ii) fabricated as a bulk plate - for example. Element Six supplies Diafilm EP as a free-standing polycrystalline plate capable of supporting current densities of >1 Acm [25]. Typically, the boron-doping concentration is 10 °-10 atoms cm when its resistivity is of the order of 0.05 cm. These boron-doped... [Pg.320]

FIG. 23. Transmission spectra for different materials in the (A) UV/Vis and (B) IR regions of the electromagnetic spectrum. The electrodes in (A) are (1) a thin film of ITO on quartz, (2) a thin film of boron-doped nanocrystalline diamond on quartz, (3) a thin film of mechanically polished and boron-doped diamond on an optically pure, white diamond substrate, and (4) a free-standing, boron-doped, and mechanically polished diamond disc. The electrodes in (B) are (5) an optically pure and mechanically polished white diamond disc, (6) an undoped and polished (both sides) Si substrate, and (7 and 8) moderately and heavily boron-doped microcrystalline diamond thin films deposited on the undoped Si. (Reprinted with permission from Interface 2003, 12, 33. Copyright (2003) The Electrochemical Society, Inc.) (From Ref. 158.)... [Pg.244]

First, the use of a large excess of substrate and only partially performed electroorganic conversion exploits statistics. Essentially, the electrolysis is conducted in almost neat substrate. This was realized with 2,4-dimethylphenol and is discussed in the entry Boron-Doped Diamond for Green Electro-Organic Synthesis. ... [Pg.827]

The appealing oxidative power of oxyl species generated boron-doped diamond is attractive for the synthesis of naturally occurring products. Even when the substrate 14 is easily oxidized,... [Pg.829]


See other pages where Boron-doped diamond substrate is mentioned: [Pg.324]    [Pg.62]    [Pg.146]    [Pg.248]    [Pg.324]    [Pg.62]    [Pg.146]    [Pg.248]    [Pg.239]    [Pg.283]    [Pg.266]    [Pg.216]    [Pg.237]    [Pg.5]    [Pg.291]    [Pg.164]    [Pg.367]    [Pg.891]    [Pg.892]    [Pg.152]    [Pg.283]    [Pg.219]    [Pg.346]    [Pg.288]    [Pg.278]    [Pg.279]    [Pg.321]    [Pg.323]    [Pg.329]    [Pg.495]    [Pg.3825]    [Pg.111]    [Pg.191]    [Pg.243]    [Pg.252]    [Pg.252]    [Pg.154]    [Pg.227]    [Pg.233]    [Pg.645]    [Pg.827]    [Pg.831]   
See also in sourсe #XX -- [ Pg.194 ]




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Diamonds boron-doped diamond

Doping boron

Doping diamond

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