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Bonding of the surfaces

This section will outline the simplest models for the spectra of both metal and semiconductor nanocrystals. The work described here has illustrated that, in order to achieve quantitative agreement between theory and experiment, a more detailed view of the molecular character of clusters must be incoriDorated. The nature and bonding of the surface, in particular, is often of crucial importance in modelling nanocrystal optical properties. Wlrile this section addresses the linear optical properties of nanocrystals, both nonlinear optical properties and the photophysics of these systems are also of great interest. The reader is referred to the many excellent review articles for more in-depth discussions of these and other aspects of nanocrystal optical properties [147, 148, 149, 150, 151, 152, 153 and 1541. [Pg.2908]

We discuss the dissolution of surface atoms from elemental semiconductor electrodes, which are covalent, such as silicon and germanium in aqueous solution. Generally, in covalent semiconductors, the bonding orbitals constitute the valence band and the antibonbing orbitals constitute the conduction band. The accumulation of holes in the valence band or the accumulation of electrons in the conduction band at the electrode interface, hence, partially breaks the covalent bonding of the surface atom, S, (subscript s denotes the surface site). [Pg.298]

The physical cause in the first aspect is, most convincingly, associated with the back-bond strength theory. That is, atoms on the (111) surface have three bonds connected to the substrate lattice while those on the (100) surface have only two as shown in Fig. 7.39. Bonding of the surface silicon atoms to solution species such as Olf reduces the strength of the back bonds. The number of back bonds and the strength of surface bonds to the adsorbed species are then responsible for the different reactivity of different crystal surfaces. This can be regarded as the fundamental physical cause of anisotropic etching. [Pg.320]

High-resolution ELS and LEED have also been used in a study of C2H2 adsorption on Ni(lll). At room temperature no LEED pattern was observed although the work function was lowered by 1.5 V. Only H2 is desorbed upon heating. From ELS after low exposures (<1.5 L) it was deduced that the C—C bonds of the surface species had an order of 1.15. Thermal desorption showed no low-temperature desorption of H2 and so it was thought that C2H2 was bonded associatively with likely tt and a interactions, with the two H atoms equivalent. [Pg.23]

LEED (Yang et al., 1982) and MEIS (Derry et al, 1986) structural analyses of the C(lll) diamond surface indicate that the surface is almost identical to the bulk termination of the diamond lattice. However, both of these studies note that the dangling bonds of the surface C atoms were probably saturated by adsorbed H. The MEIS investigation (Derry et al., 1986) suggests that the first interlayer spacing of C(lll) is slightly contracted by —1 1% of the bulk interplanar spacing. The earlier LEED study saw no contraction within the error of the analysis. [Pg.50]

The circumstances of the last two examples should give rise to a maximum of rate at an intermediate strength of bonding of the surface radical when the r.d.s. is still discharged directly... [Pg.19]

Adsorption retention forces attraction of a solute onto a solid stationary phase due to microporosity (pores 5-50 nm) and polar character (formation of van der Waal s forces and hydrogen bonding) of the surface, described by Langmuir isotherms (see isotherms). [Pg.525]

BONDS OF THE SURFACE OF A CRYSTALLITE OR IN THE CAGE OF MOLECULAR CLUSTERS. 167... [Pg.137]

Transfer of an electronic effect through metal-metal bonds of the surface of a crystallite or in the cage of molecular clusters... [Pg.167]

Additional electrostatic interactions of the hydrogen bonds of the surface hydroxyl groups with the framework must be excluded... [Pg.11]

Raymond, E.A. and Richmond, G.L., Probing the molecular structure and bonding of the surface of aqueous salt solutions, /. Phys. Chem. B, 2004,108, 5051-5059. [Pg.59]


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See also in sourсe #XX -- [ Pg.52 ]




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