Bandgap semiconductors

Gillis H P, Choutov D A and Martin K P 1996 The dry etching of Group Ill-Nitride wide bandgap semiconductors J. Mater. 48 50-5... 

Thin film photovoltaic devices (CdTe is a direct bandgap semiconductor with a bandgap energy of 1.5 eV at room temperature). 

Diamond, however, is not the universal semiconductor panacea it is an indirect bandgap semiconductor and does not lase. In addition, present semiconductor materials, such as silicon and gallium arsenide, are solidly entrenched with a well-established technology, and competing with them will not be an easy task. CVD diamond will also compete with silicon carbide, which has also an excellent potential as a high-performance semiconductor material and is considerably easier and cheaper to produce. 

Vogel R, Hoyer P, WeUer H (1994) Quantum-sized PbS, CdS, AgiS, SbiSs, and BiiSs particles as sensitizers for various nanoporous wide-bandgap semiconductors. J Phys Chem 98 ... 

Electrode Stability and Photoelectrolysis Using Appropriate Bandgap Semiconductors... 

Assuming that an efficient D-A type of molecule can be synthesized, it should be possible to deposit these molecules as a monolayer onto a glass slide coated with a metal such as aluminum or a wide bandgap semiconductor such as Sn(>2. With the acceptor end of the molecule near the conductor and with contact to the other side via an electrolyte solution it should be possible to stimulate electron transfer from D to A and then into the conductor, through an external circuit and finally back to D through the electrolyte. This would form the basis of a new type of solar cell in which the layer of D-A molecules would perform the same function as the p-n junction in a silicon solar cell (50). Only the future will tell whether or not this concept will be feasible but if nature can do it, why can t we ... 

The size of the bandgap can vary from a fraction of an eV (in the IR region of the spectrum) to ca. 4 eV or more (wide-bandgap semiconductors). The upper limit is somewhat arbitrary a substance commonly thought of as an insulator such as diamond has a large bandgap of 5.5 eV, but it can nevertheless be doped with elements such as B, N, or P to become an electrically-conducting semiconductor. 

J. A. Cooper, Jr., Nonvolatile Random Access Memories in Wide Bandgap Semiconductors... 

The ability to respond effectively to an event will require first responders and HAZMAT teams to coordinate thousands of details. Development of new materials for advanced telecommunications and radar could greatly improve the current response standard. Materials that can lead to faster computers, higher-density storage, and more efficient telecommunications are vital. One example of a basic area of research that could have an impact on our ability to respond to a threat is wide bandgap semiconductors, used, for instance, in phased-array radars. The development of shipboard phased-array radar systems over the past few decades has provided the military with a very high degree of situational awareness with respect to airborne targets. 

Kimg P, Razeghi M (2000) Ill-Nitride wide bandgap semiconductors, a simvey of the cimrent status and future trends of the material and device technology. Opto-Electronics Review 8(3), 201-239... 

If small bandgap semiconductors could be stabilized in water for much more prolonged time by polymer coating, it must lead to developments of efficient photochemical cell and water photolysis system. 

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