Atomic reaction with silane

Titanocene derivatives catalyze reductive cyclization of an alkene with a hetero-atom-containing functional group and the cleavage of the titanium-oxygen bond in these metallacycles was promoted by reaction with silanes, with concomitant formation of Ti-H and Si-O bonds via a <7-bond metathesis process (Scheme 12.45) [65],... 

Oxidation. AH inorganic siUcon hydrides are readily oxidized. Silane and disilane are pyrophoric in air and form siUcon dioxide and water as combustion products thus, the soot from these materials is white. The activation energies of the reaction of silane with molecular and atomic oxygen have been reported (20,21). The oxidation reaction of dichlorosilane under low pressure has been used for the vapor deposition of siUcon dioxide (22). 

The silane coupling agents undergo chemical reaction with the surface of inorganic substances to form an SiOM bond (M Si atom in glass). 

The HWCVD deposition process is more or less the same as for PECVD, and was described in Section 1.7. Important differences between the two is the absence of ions, and the limited number of different species present in the gas phase, in the former. At low pressure atomic Si is the main precursor. This yields void-rich material with a high microstructure factor. Increasing the pressure allows gas phase reactions with Si and H to create more mobile deposition precursors (SiH3), which improves the material quality. A further increase leads to the formation of higher silanes, and consequently to a less dense film. 

Although we will deal with organic radicals in solution, it is worth mentioning that the reactivity of atoms and small organic radicals with silanes in the gas phase has been studied extensively. For example, the bond dissociation energies of a variety of Si-H bonds are based on the reaction of iodine or bromine with the corresponding silanes.1... 

Despite the potential for atomic-scale manipulation of interfaces displayed by molecular-beam epitaxial growth, a majority of the vapor-phase growth of silicon is accomplished by the reaction of silane with silicon substrates This... 

The concept of this method is illustrated in Scheme 3.1, where the clock reaction (U R ) is the unimolecular radical rearrangement with a known rate constant ( r)- The rate constant for the H atom abstraction from RsSiH by a primary alkyl radical U can be obtained, provided that conditions are found in which the unrearranged radical U is partitioned between the two reaction channels, i.e., the reaction with RsSiH and the rearrangement to R. At the end of the reaction, the yields of unrearranged (UH) and rearranged (RH) products can be determined by GC or NMR analysis. Under pseudo-first-order conditions of silane concentration, the following relation holds UH/RH = (A H/A r)[R3SiH]. A number of reviews describe the radical clock approach in detail [3,4]. 

The readily available yttrocene derivative (C5Me5)2YMe(THF) has been shown to be an effective catalyst for the hydrosilylation of internal alkynes [85]. A single stereoisomer, i.e. the product of cis addition of phenylsilane to the alkyne, is formed in the reaction with symmetrically substituted alkynes. Comparable reactions with a variety of unsymmetrically substituted internal alkynes resulted in a regioselective hydrosilylation reaction in which the silane moiety is placed at the sterically less hindered carbon atom of the alkyne. Various functional groups such as halides, amines, protected alcohols, and trisubstituted... 

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