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As-deposited samples

Fig. 3 shows the Raman spectra of the as-deposited and laser irradiated a-C films deposited at 300 V substrate bias. The spectrum for the as-deposited sample can be fitted with a single BWF peak located at 1536.3 cm which corresponds to the presence of about 50% s[ bonded atoms. Laser irradiation with energies higher than 206 mJ/cm results in the formation of sp clusters which is significantly lower compare to the same energy required for sf clustering in high sp bonded films (Fig. 3B). [Pg.453]

Fig. 19. Photoluminescence efficiency as a function of ESR spin (tensity for samples of a-Si H prepiared by the glow-discharge technique at 300°K under a wide range of deposition conditions. The two solid curves represent model calculations, which give bounds on the data for as-deposited samples. [From Street et al (1978).]... Fig. 19. Photoluminescence efficiency as a function of ESR spin (tensity for samples of a-Si H prepiared by the glow-discharge technique at 300°K under a wide range of deposition conditions. The two solid curves represent model calculations, which give bounds on the data for as-deposited samples. [From Street et al (1978).]...
FIGURE 9.5 Random RBS spectra recorded on MgO thin films implanted with 1.5 MeV ions (a) and Li" ions (b) at various fluences along with as-deposited sample. [Pg.229]

It was later shown for the Mo-Ni-O powder electrodeposition [33] that this mechanism is only partially correct and that amraig metallic Ni and Mo, the M0O3 phase is also electrodeposited. Taking into account that NiO, M0O3, and MoNid phases were detected in as-deposited samples by TEM, it was obvious that the mechanism of alloy electrodeposition similar to the one presented by Eqs. (7.16, 7.17, 7.18, and 7.19) could be applied for the formation of MoNid phase only, since it assumed complete reduction of both metal ions. By the analogy with the mechanism proposed by Podlaha and Landolt [28-30], it was suggested that the MoNid phase could be formed by the following mechanism [34] ... [Pg.259]

Spin orientation in Fe film layers is very sensitive to the thickness and conditions of deposition [55]. For example, isotropic magnetization in Fe-Al multilayers for a range of Fe layer thickness between 20 and 40 A has been reported, while It Is In plane for Fe thickness I0A[56]. In the present MLS, considerable stress is developed at the interface due to large mismatch In the lattice parameters of Fe and Al (2.866 and 4.049 A respectively) as also between Fe and FesAI like regions that have lattice parameters about double that of Fe. These stresses can cause alignment of magnetic moments within the intermixed Fe-Al region evidenced by the square loop obtained in the M-H curve of the as-deposited sample. [Pg.450]

Special thanks to A. Recnik from the Jozef Stefan Institute, Ljubljana, Slovenia, for TEM analysis of as-deposited samples. [Pg.338]

The best agreemeni is obtained between measured and calculated values for the weight percents of oxygen, nitrogen, hydrogen, and carbon atoms and for the molar ratio MDI/MDA, if the values of f, m, and n are assumed to be 5. This suggests that as-deposited samples consist not of polymers but of oligomers of polyurea. [Pg.920]

Figure 10 shows the change of X-ray diffraction paltcm by heat treatment. The as-deposited sample is almost amorphous. Vritb increasing temperature, crystallizalion takes place at about 120 C. A rough estimation of the degree of crystalUzatioa deduced from the comparison of the area of peaks and the diffuse part of the diffiaetkm pattern is given in Figure 11. The annealed sample has a degree of crystallinity of about 30%. Figure 10 shows the change of X-ray diffraction paltcm by heat treatment. The as-deposited sample is almost amorphous. Vritb increasing temperature, crystallizalion takes place at about 120 C. A rough estimation of the degree of crystalUzatioa deduced from the comparison of the area of peaks and the diffuse part of the diffiaetkm pattern is given in Figure 11. The annealed sample has a degree of crystallinity of about 30%.
After 10 min. of annealing at 850 C, the scattering intensity of the characteristic peak is comparable to that of the as-deposited samples (Fig. 11.4c). This implies that the strained in the diamond film generated by irradiation has been partially relieved by annealing. Usually, this may be achieved by the recombination of excess interstitials and vacancies. The presence of nickel on the... [Pg.246]

Figure 12.11. Raman spectra for as-deposited sample (dashed lines) and annealed (solid lines) Ge NCs [5]. Figure 12.11. Raman spectra for as-deposited sample (dashed lines) and annealed (solid lines) Ge NCs [5].

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See also in sourсe #XX -- [ Pg.468 ]




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