Antireflective coating limitations

Despite such limitations, plasma-deposited a-C(N) H films were found to be used in a number of applications. The stress reduction induced by nitrogen incorporation [12] and consequent adhesion improvement, allowed the development of a-C(N) H antireflective coatings for Ge-based infrared detectors [13]. It was also found that N can electronically dope a-C H films, and can strongly decrease the defect density, which gives prospects on its use as a semiconductor material [14]. Nitrogen incorporation was also found to decrease the threshold electric field in electron-field emission process [15], making possible the use of a-C(N) H films as an overcoat on emission tips in flat-panel display devices [16]. 

In the present experiment, the optical fiber is aligned to the sensor chip using a separate micropositioner, and no antireflection coatings are used on the chip facets. As a result, the observed noise floor is limited by vibrations and interference effects of the present experimental setup. With the adoption of well-established packaging... 

Measurements are performed according to descriptions made in Sections 21.4.2.3 and 21.4.2.4. No antireflective coating has been applied on the prototypes because of time limitations. An aluminium foil was disposed at the rear face of the prototypes, onto the mounting bracket platform. Obtained results are presented in Rg. 21.23. For the lamp producing a reference power of 1000 W/m, it is noticeable that in the conditions of maximum exposure (angle fi = 90 degree), the prototype transmits a power output of about 1.4 W/m. ... 

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