Annealing temperature dependence

Figure 9.2 Annealing temperature dependence of positron lifetime parameters for the a-Si H films (a) t3 and I3 (b) t2. (Suzuki et al., 1997)...

The thermal expansion also depends on the composition and varies (from 3.3 x 10 per °C for ordinary borosilicate glass (widely used for laboratory glassware) to 7.2 x 10 per °C for speeial types used in graded seals. The annealing temperature, depending on composition, is from 510°C to 600°C. 

K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Antoniadis, Annealing Temperature Dependence on the Thermal Conductivity of LPCVD Silicon Dioxide Layers, IEEE Trans. Electron Dev. Lett. (15) 490-492,1993. 

Annealing at elevated temperatures also reduces ATj (to 10 spins cm ), but the exact dependence on annealing temperature depends on the purity of the samples (Thomas et ai, 1978 Yonehara et ai, 1980). In the purest samples A s appears to be a monotonically decreasing function of annealing temperture. 

The annealing temperature dependence of such a surface mobile layer will now be discussed. At 370 K, the thickness of the surface mobile layer was 10 2.8 nm. It should be of interest to compare the thickness with the chain dimension. Twice the radius of gyration (2/fg) of an unperturbed PS with Mn of 29k is calculated to be 9.3 nm. This value is comparable to the surface layer thickness. At 365 and 355 K, the interfacial thicknesses similarly increased with time at first and then became invariant with respect to the annealing time, as shown in Fig. 8c, d. The evolved interfacial thickness at 365 and 355 K were 9.6 2.5 and 11.4 0.9 nm, respectively. Half of these values, namely surface mobile layer thicknesses, are much... 

Figure 8.13 Annealing temperature dependence of the integral width for the POW of T iy = 20 °C and 70 °C (a) crystalline, (b) intermediate, and (c) amorphous components.

Rgure 1.19 (a) Annealing temperature dependence of ex situ X-ray powder diffiac-... 

The time for classical simulated annealing increases exponentially as a function of the ratio of the energy scales /AU. However, for 5 > 1 the situation is qualitatively different. As a result of the weak temperature dependence in the barrier crossing times, the time for simulated annealing increases only weakly as a power law. 

Its value at 25°C is 0.71 J/(g-°C) (0.17 cal/(g-°C)) (95,147). Discontinuities in the temperature dependence of the heat capacity have been attributed to stmctural changes, eg, crystaUi2ation and annealing effects, in the glass. The heat capacity varies weakly with OH content. Increasing the OH level from 0.0003 to 0.12 wt % reduces the heat capacity by approximately 0.5% at 300 K and by 1.6% at 700 K (148). The low temperature (<10 K) heat capacities of vitreous siUca tend to be higher than the values predicted by the Debye model (149). 

Fig. 2. Temperature dependencies of spin susceptibilities, linewidths and g-values of the CESR for the purified CNTs (open circle) and the annealed purified CNTs (solid circle).

The strains needed to initiate cracks in both the annealed and the sensitised materials were obtained using tapered slow-strain-rate specimens and the data are given in Fig. 8.36. As can be seen, there is little temperature dependence of the strain needed to initiate cracks in sensitised material whereas the annealed material was most susceptible to cracking at about 250°C. These results indicate the complicated response of Type 316 stainless steel to applied potential and demonstrate that, even though environmentally-assisted cracking may be generated by severe test methods, in this case the slow-strain-rate test, the results obtained must be used with care. For instance, the cracking of the annealed material at low potentials... 

If the miscibility gap of Pri+xl2 is temperature dependent (which they usually are), then Prl2 could be a line phase at, say, ambient temperature, i.e., x = 0. Hence, on quenching or when the annealing process progresses, the metastable i+xh phase must release praseodymium metal. This surplus praseodymium metal can be released from both the 3 a (heavily under-occupied) and 3 b (fully occupied) positions combined with site changes from 3 b to 3 a, or not. These... 

Works [40, 91] surveyed y versus temperature for deactivation of 02( Aj ) on quartz at 350- 900 K. The obtained temperature dependencies were in the Arrhenius form with the activation energy of 18.5kJ/mole. A conclusion was drawn up about the chemisorption mechanism of singlet oxygen deactivation on quartz surface. A similar inference was arrived at by the authors of work [92] relative to 02( A ) deactivation (on a surface of oxygen-annealed gold). 

Films of CoB have been prepared by electroless deposition. Chang et al. [25] deposited magnetically soft amorphous films, which could be annealed to give materials with an Hc of 250 Oe. Depending on the annealing temperature, the films crystallized as the hep or fee modifications of Co. Matsui and co-workers [22] obtained crystalline materials in the as-deposited state, the crystalline characteristics being determined by processing conditions. A maximum HQ of 300 Oe was observed for films with 10.0 preferred orientation. 

The specificity of bacterial detection by PCR depends on both the degree of homology between the primers and the target DNA, which dictates how well the primers bind to the target, and the annealing temperature at which the target hybridizes to the primers.83 The primers are designed from the... 

---