Advanced PLD Techniques

In this section advanced developments of the PLD technique are shortly described, e.g., the combinatorial approach and laser MBE. Because of the increasing research interest in ZnO-based nanostructures, the established PLD (at background gas pressure 10-4—3 mbar) was extended to much higher pressures of 50-200 mbar to grow arrays of free-standing ZnO nanowires. This unique high-pressure PLD process allows the growth of ZnO-based nanostructures with controlled shape and diameter and excellent optical properties. 

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First successful ZnO device demonstrations as for example stable homo-and heteroepitaxial pn-junctions and LED structures, thin film scintillators, and quantum well structures with optical confinement, and oxide-based Bragg reflectors, and high-quality Schottky contacts are based on PLD grown thin films. Several techniques as for example the PLD in UHV conditions (laser MBE), and gradient and combinatorial PLD, and high-pressure PLD for nano-heterostructures show the innovative potential of the advanced growth technique PLD. 

Pulsed field gel electrophoresis, 9 746 Pulsed flashlamps, 14 619 Pulsed laser deposition chamber, 24 739 Pulsed laser deposition (PLD), 24 738-743 advancement of, 24 739 as an alternative deposition technique, 24 742-743... 

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