XeF2, silicon etching

Xie et al. [20] reported the fabrication chip for pumps and an electrospray nozzle. The process used to fabricate the electrochemical pump chips with electrospray nozzle is shown in Fig. 2.11. A 1.5 xm layer of Si02 was grown on the surface of a 4 inch silicon wafer by thermal oxidation. The front side oxide layer was patterned and removed with buffered FIF. XeF2 gaseous etching was used to roughen the silicon surface in order to promote the adhesion between subsequent layers and the substrate. The first 4.5 p,m parylene layer was deposited. 

Houle F A 1986 A reinvestigation of the etch products of silicon and XeF2 doping and pressure effected. Appl. Phys. 60 3018-27... 

Houle F A 1987 Dynamics of SiF, desorption during etching of silicon by XeF2 J. Chem Phys. 87 1866-72... 

Figure 16. The influence of Ar ion beams on the etch rate of silicon by XeF2 ...

Figure 4. Example of ion-assisted gas-surface chemistry in the etching of silicon with XeF2. The XeF2flow is 2 X 1015 molls, and the argon energy and current are 450 eV and 2.5 yA, respectively. (Reproduced with permission from reference 39. Copyright 1979 American Institute of Physics.)...

Fig. 21 Etch rale of polycrystalline silicon under the influence of XeF2 gas and 450-eV Ar ion impact and under the combined influence (after Cobum, 1994).

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