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Voltages total

Nominal system Individual hannonic voltage Total harmonic... [Pg.744]

Coulomb-repulsion strength of two f-electrons on the same ionic shell (Hubbard repulsion), also electrical voltage total partition function unperturbed partition function of band electrons... [Pg.344]

Reversible anode voltage Reversible cathode voltage Total... [Pg.305]

The current below the peak shows the I oc dependence which is characteristic of space charge limited currents (Figure 27). The current is a function of (voltage), not of (voltage/total thickness of oxide). It is nearly independent of temperature from room temperature to 3°K. Electron emission into vacuum and electroluminescence have been observed and indicate energetic electrons. [Pg.244]

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
Examining equation 12.41 shows that we can decrease a solute s migration time (and thus the total analysis time) by applying a higher voltage or by using a shorter capillary tube. Increasing the electroosmotic flow also shortens the analysis time, but, as we will see shortly, at the expense of resolution. [Pg.600]

McKillop and associates have examined the electrophoretic separation of alkylpyridines by CZE. Separations were carried out using either 50-pm or 75-pm inner diameter capillaries, with a total length of 57 cm and a length of 50 cm from the point of injection to the detector. The run buffer was a pH 2.5 lithium phosphate buffer. Separations were achieved using an applied voltage of 15 kV. The electroosmotic flow velocity, as measured using a neutral marker, was found to be 6.398 X 10 cm s k The diffusion coefficient,... [Pg.619]

A layer of oil or paraffin wax is floated on top of the electrolyte to minimize heat and water losses. Cell voltages vary between 1.8 and 2.5 V. In one mode of operation (83) the electrolyte is circulated through the cell at a rate of about 3% of the total volume per minute with the solution usually being introduced at the bottom of the cell. The electrolyte is replenished every one to two hours by drawing off about 10—20% of the total electrolyte volume for treatment with MnCO or MnO, followed by filtration, and is then returned to the electrolysis cycle. [Pg.514]

The voltage used for electro dialysis is about 1 V per membrane pair, and the current flux is of the order of 100 A/m of membrane surface. The total power requirement increases with the feedwater salt concentration, amounting to about 10 MW per m product water per 1000 ppm reduction in salinity. About half this power is required for separation and half for pumping. Many plant flow arrangements exist, and their description can be found, along with other details about the process, in References 68 and 69. Many ED plants, as large as 15,000 vsf jd, are in operation, reducing brackish water concentration typically by a factor of 3—4. [Pg.253]

Rotor resistance ii/phase / e = External resistance il/phase / 2i = Total rotor resistance il/phase R = required rotor circuit resistance ssC2 = rotor standstill voltage /jt = required rotor current... [Pg.96]


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See also in sourсe #XX -- [ Pg.59 ]




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Total Cell Voltage

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